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参数资料
| 型号： | MRF374 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | NI-650, CASE 375F-03, 5 PIN |
| 文件页数： | 11/12页 |
| 文件大小： | 1140K |
| 代理商： | MRF374 |
MRF374
8
MOTOROLA RF DEVICE DATA
TYPICAL TWO–TONE BROADBAND CHARACTERISTICS
Figure 9. Broadband Intermodulation Distortion
versus Output Power
-50
10
Pout, OUTPUT POWER (WATTS) PEP
-10
-45
-30
1
IMD,
INTERMODULA
TION
DIST
OR
TION
(dBc)
Figure 10. Broadband Power Gain versus
Output Power
15
Pout, OUTPUT POWER (WATTS) PEP
8
Figure 11. Broadband Efficiency versus
Output Power
Pout, OUTPUT POWER (WATTS) PEP
10
1
30
1
10
1000
60
10
11
12
-35
-40
10
1000
-20
1000
100
G
ps
,POWER
GAIN
(dB)
14
13
9
η D
,DRAIN
EFFICIENCY
(%)
40
0
20
100
-25
-15
100
470 MHz
660 MHz
860 MHz
VDD = 28 Vdc
FREQUENCY = 6 MHz
IDQ = 500 mA
VDD = 28 Vdc
FREQUENCY = 6 MHz
IDQ = 500 mA
470 MHz
660 MHz
860 MHz
VDD = 28 Vdc
FREQUENCY = 6 MHz
IDQ = 500 mA
470 MHz
660 MHz
860 MHz
50
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
Archived 2005
A
R
C
H
IV
E
D
2
0
5
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| MRF377R3 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF377R5 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF374A | 功能描述:射频MOSFET电源晶体管 RF POWER LDMOS U650 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF374A_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF377 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTOR |
| MRF377HR3 | 功能描述:射频MOSFET电源晶体管 250W 860MHZ 32V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF377HR3_09 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
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