参数资料
型号: MRF373SR1
厂商: FREESCALE SEMICONDUCTOR INC
元件分类: 功率晶体管
英文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封装: NI-360S, CASE 360C-05, 3 PIN
文件页数: 8/12页
文件大小: 1482K
代理商: MRF373SR1
5
MRF373R1 MRF373SR1
MOTOROLA RF DEVICE DATA
Figure 5. Single–Ended Narrowband Test Circuit Layout
(Suitable for Use with MRF373SR1)
R2
C25
C24
R1
C7
C1
C8
C9
C10
C2
C3
C6
C5
C22
C21
C20
L1
MRF373S
C23
TO DRAIN
BIAS SUPPLY
TO GATE
BIAS SUPPLY
C4
C11
Figure 6. MRF373SR1 Narrowband Test Circuit Photo
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
Archived 2005
A
R
C
H
IV
E
D
2
0
5
相关PDF资料
PDF描述
MRF373 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF373S UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF374A 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF374 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF377HR5 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
相关代理商/技术参数
参数描述
MRF374 制造商:ASI 制造商全称:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR
MRF374A 功能描述:射频MOSFET电源晶体管 RF POWER LDMOS U650 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF374A_06 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF377 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTOR
MRF377HR3 功能描述:射频MOSFET电源晶体管 250W 860MHZ 32V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray