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参数资料
| 型号： | MRF372R3 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-860C3, CASE 375G-04, 4 PIN |
| 文件页数： | 1/16页 |
| 文件大小： | 507K |
| 代理商： | MRF372R3 |
MRF372R3 MRF372R5
1
RF Device Data
Freescale Semiconductor
RF Power Field-Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequen-
cies from 470 to 860 MHz. The high gain and broadband performance of this
device make it ideal for large-signal, common source amplifier applications in
32 volt transmitter equipment.
Typical Narrowband Two-Tone Performance @ f1 = 857 MHz,
f2 = 863 MHz, 32 Volts
Output Power — 180 Watts PEP
Power Gain — 17 dB
Efficiency — 36%
IMD — -35 dBc
Typical Broadband Two-Tone Performance @ f1 = 857 MHz,
f2 = 863 MHz, 32 Volts
Output Power — 180 Watts PEP
Power Gain — 14.5 dB
Efficiency — 37%
IMD — -31 dBc
Capable of Handling 3:1 VSWR @ 32 Vdc, 857 MHz, 90 Watts CW Output
Power
Features
Internally Matched for Ease of Use
Integrated ESD Protection
Excellent Thermal Stability
Characterized with Series Equivalent Large-Signal Impedance Parameters
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
R5 Suffix = 50 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +68
Vdc
Gate-Source Voltage
VGS
-0.5, +15
Vdc
Drain Current - Continuous
ID
17
Adc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
350
2.0
W
W/°C
Storage Temperature Range
Tstg
-65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
RθJC
0.5
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M3 (Minimum)
LIFETIME
BUY
LAST
ORDER
3
OCT
08
LAST
SHIP
14
MA
Y
09
Document Number: MRF372
Rev. 9, 5/2006
Freescale Semiconductor
Technical Data
470-860 MHz, 180 W, 32 V
LATERAL N-CHANNEL
RF POWER MOSFET
CASE 375G-04, STYLE 1
NI-860C3
MRF372R3
MRF372R5
Freescale Semiconductor, Inc., 2006. All rights reserved.
相关PDF资料 |
PDF描述 |
|---|---|
| MRF372 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF373R1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF373SR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF373 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF373S | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF372R5 | 功能描述:射频MOSFET电源晶体管 180W 860MHZ NI-860MOD RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF373 | 制造商:Freescale Semiconductor 功能描述: |
| MRF373A | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
| MRF373AL | 制造商:Freescale Semiconductor 功能描述:TRANS MOSFET N-CH 70V 3-PIN NI-360 - Bulk |
| MRF373ALR1 | 功能描述:射频MOSFET电源晶体管 75W 860MHZ LDMOS NI360L RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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