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参数资料
| 型号： | MRF21180S |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | NI-1230S, CASE 375E-03, 5 PIN |
| 文件页数： | 5/12页 |
| 文件大小： | 356K |
| 代理商： | MRF21180S |
MRF21180 MRF21180S
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS (1)
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 100 Adc)
V(BR)DSS
65
—
Vdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
10
Adc
Gate–Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
1
Adc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 200 Adc)
VGS(th)
2
—
4
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 850 mAdc)
VGS(Q)
3
3.9
5
Vdc
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 2 Adc)
VDS(on)
—
0.18
0.22
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
gfs
—
6
—
S
DYNAMIC CHARACTERISTICS (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
Crss
—
3.6
—
pF
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (2)
2–Carrier W–CDMA, 3.84 MHz Channel Bandwidth Carriers. Each carrier has Peak/Avg. ratio = 8.3 dB @ 0.01% Probability on CCDF.
Common–Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 2 x 850 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz,
f2 = 2167.5 MHz)
Gps
11
12.1
—
dB
Drain Efficiency
(VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 2 x 850 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz,
f2 = 2167.5 MHz)
η
19
22
—
%
Third Order Intermodulation Distortion
(VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 2 x 850 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz,
f2 = 2167.5 MHz; IM3 measured over 3.84 MHz BW @ f1 –10 MHz
and f2 +10 MHz)
IM3
—
–37.5
–35
dBc
Adjacent Channel Power Ratio
(VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 2 x 850 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz,
f2 = 2167.5 MHz; ACPR measured over 3.84 MHz BW @ f1 – 5 MHz
and f2 +5 MHz.)
ACPR
—
–41
–39
dBc
Input Return Loss
(VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 2 x 850 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz,
f2 = 2167.5 MHz)
IRL
—
–12
–9
dB
Output Mismatch Stress
(VDD = 28 Vdc, Pout = 170 W CW, IDQ = 2 x 850 mA, f = 2170 MHz
VSWR = 5:1, All Phase Angles at Frequency of Tests)
Ψ
No Degradation In Output Power
Before and After Test
(1) Each side of device measured separately. Part is internally matched both on input and output.
(2) Measurements made with device in push–pull configuration.
(continued)
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