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参数资料
| 型号： | MRF21120R6 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | ROHS COMPLIANT, NI-1230, CASE 375D-05, 4 PIN |
| 文件页数： | 6/12页 |
| 文件大小： | 371K |
| 代理商： | MRF21120R6 |
MRF21120R6
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) (1) (continued)
Power Output, 1 dB Compression Point
(VDD = 28 Vdc, CW, IDQ = 1000 mA, f1 = 2170.0 MHz)
P1dB
—
120
—
W
Common-Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 120 W CW, IDQ = 1000 mA,
f1 = 2170.0 MHz)
Gps
—
10.5
—
dB
Drain Efficiency
(VDD = 28 Vdc, Pout = 120 W CW, IDQ = 1000 mA,
f1 = 2170.0 MHz)
η
—
42
—
%
1. Device measured in push-pull configuration.
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