- 您现在的位置：买卖IC网 > PDF目录98036 > MRF184R1 (FREESCALE SEMICONDUCTOR INC) UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET PDF资料下载
参数资料
| 型号： | MRF184R1 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | NI-360, CASE 360B-05, 3 PIN |
| 文件页数： | 5/12页 |
| 文件大小： | 1009K |
| 代理商： | MRF184R1 |
Archived 2005
A
R
C
H
IV
E
D
2
0
5
MRF184R1 MRF184SR1
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS – continued (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 V, ID = 200 A)
VGS(th)
2
3
4
Vdc
Gate Quiescent Voltage
(VDS = 28 V, ID = 100 mA)
VGS(Q)
3
4
5
Vdc
Drain–Source On–Voltage
(VGS = 10 V, ID = 3 A)
VDS(on)
–
0.65
0.8
Vdc
Forward Transconductance
(VDS = 10 V, ID = 3 A)
gfs
2.2
2.6
–
s
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 28 V, VGS = 0 V, f = 1 MHz)
Ciss
–
83
–
pF
Output Capacitance
(VDS = 28 V, VGS = 0 V, f = 1 MHz)
Coss
–
44
–
pF
Reverse Transfer Capacitance
(VDS = 28 V, VGS = 0 V, f = 1 MHz)
Crss
–
4.3
–
pF
FUNCTIONAL CHARACTERISTICS
Common Source Power Gain
(VDD = 28 V, Pout = 60 W, f = 945 MHz, IDQ = 100 mA)
Gps
11.5
13.5
–
dB
Drain Efficiency
(VDD = 28 V, Pout = 60 W, f = 945 MHz, IDQ = 100 mA)
η
53
60
–
%
Load Mismatch
(VDD = 28 V, Pout = 60 W, IDQ = 100 mA, f = 945 MHz,
Load VSWR 5:1 at all Phase Angles)
ψ
No Degradation in Output Power
Figure 1. MRF184 Test Circuit Schematic
B1
Short RF Bead Fair Rite–2743019447
C1
18 pF Chip Capacitor
C2, C3, C6, C9
43 pF Chip Capacitor
C4
100 pF Chip Capacitor
C5, C12
10
F, 50 Vdc Electrolytic Capacitor
C7, C10
1000 pF Chip Capacitor
C8, C11
0.1
F, 50 Vdc Chip Capacitor
C13
250
F, 50 Vdc Electrolytic Capacitor
R1
R2
R3
C1
C2
C3
C4
C5
C6
C7
C8
C9
C10
C11
L1
B1
R4
DUT
C13
C12
TL1
TL2
TL3
TL4
RF
INPUT
RF
OUTPUT
VGG
VDD
L1
5 Turns, 20 AWG, IDIA 0.126
″
R1
10 k
, 1/4 W Resistor
R2
13 k
, 1/4 W Resistor
R3
1.0 k
, 1/4 W Chip Resistor
R4
4 x 39
, 1/8 W Chip Resistor
TL1–TL4
Microstrip Line See Photomaster
Ckt Board
1/32
″ Glass Teflon, εr = 2.55
ARLON–GX–0300–55–22
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
相关PDF资料 |
PDF描述 |
|---|---|
| MRF184SR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF184 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF19045R3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF19045SR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF19085LR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF184S | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
| MRF184SR1 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF185 | 制造商:ASI 制造商全称:ASI 功能描述:RF POWER MOSFET |
| MRF185_02 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:N-Channel Enhancement-Mode Lateral MOSFET |
| MRF186 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:The RF MOSFET Line RF POWER FIELD-EFFECT TRANSISTOR Channel Enhancement?Mode Lateral MOSFET |
发布紧急采购，3分钟左右您将得到回复。