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参数资料
| 型号： | MRF183LSR1 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | NI-360S, CASE 360C-05, 2 PIN |
| 文件页数： | 1/12页 |
| 文件大小： | 335K |
| 代理商： | MRF183LSR1 |
LIFETIME
BUY
LAST
ORDER
31JUL04
LAST
SHIP
31JAN05
MRF183R1 MRF183LSR1
MOTOROLA RF DEVICE DATA
The RF MOSFET Line
RF Power
Field Effect Transistors
N-Channel Enhancement-Mode Lateral
MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies to 1.0 GHz. The high gain and broadband performance of these devices
make them ideal for large-signal, common source amplifier applications in 28
volt base station equipment.
Guaranteed Performance at 945 MHz, 28 Volts
Output Power — 45 Watts PEP
Power Gain — 11.5 dB
Efficiency — 33%
IMD — - 28 dBc
Excellent Thermal Stability
Characterized with Series Equivalent Large-Signal
Impedance Parameters
S-Parameter Characterization at High Bias Levels
100% Tested for Load Mismatch Stress at all Phase Angles
with 5:1 VSWR @ 28 Vdc, 945 MHz, 45 Watts CW
In Tape and Reel. R1 Suffix = 500 Units per
32 mm, 13 inch Reel.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
65
Vdc
Drain-Gate Voltage (RGS = 1 Meg Ohm)
VDGR
65
Vdc
Gate-Source Voltage
VGS
±20
Vdc
Drain Current - Continuous
ID
5
Adc
Total Device Dissipation @ TC = 70°C
Derate above 70°C
PD
86
0.67
W
W/°C
Storage Temperature Range
Tstg
- 65 to +200
°C
Operating Junction Temperature
TJ
200
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
1.5
°C/W
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF183/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF183R1
MRF183LSR1
1.0 GHz, 45 W, 28 V
LATERAL N-CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 360B-05, STYLE 1
NI-360
MRF183R1
CASE 360C-05, STYLE 1
NI-360S
MRF183LSR1
Motorola, Inc. 2003
G
D
S
REV 15
相关PDF资料 |
PDF描述 |
|---|---|
| MRF183R1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF183R1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF183SR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF183SR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF184SR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF183R1 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF183S | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
| MRF184 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
| MRF184R1 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF184S | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
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