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参数资料
| 型号： | MRF1513T1 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | PLASTIC, PLD-1.5, CASE 466-03, 4 PIN |
| 文件页数： | 9/16页 |
| 文件大小： | 523K |
| 代理商： | MRF1513T1 |
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RF Device Data
Freescale Semiconductor
MRF1513T1
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Current
(VDS = 40 Vdc, VGS = 0 Vdc)
IDSS
—
1
μAdc
Gate-Source Leakage Current
(VGS = 10 Vdc, VDS = 0 Vdc)
IGSS
—
1
μAdc
On Characteristics
Gate Threshold Voltage
(VDS = 12.5 Vdc, ID = 60 μA)
VGS(th)
1.0
1.7
2.1
Vdc
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 500 mAdc)
VDS(on)
—
0.65
—
Vdc
Dynamic Characteristics
Input Capacitance
(VDS = 12.5 Vdc, VGS = 0, f = 1 MHz)
Ciss
—
33
—
pF
Output Capacitance
(VDS = 12.5 Vdc, VGS = 0, f = 1 MHz)
Coss
—
16.5
—
pF
Reverse Transfer Capacitance
(VDS = 12.5 Vdc, VGS = 0, f = 1 MHz)
Crss
—
2.2
—
pF
Functional Tests (In Freescale Test Fixture)
Common-Source Amplifier Power Gain
(VDD = 12.5 Vdc, Pout = 3 Watts, IDQ = 50 mA, f = 520 MHz)
Gps
10
11
—
dB
Drain Efficiency
(VDD = 12.5 Vdc, Pout = 3 Watts, IDQ = 50 mA, f = 520 MHz)
η
50
55
—
%
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