参数资料
型号: MPSA70RL
厂商: ON SEMICONDUCTOR
元件分类: 小信号晶体管
英文描述: 100 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封装: PLASTIC, TO-226AA, 3 PIN
文件页数: 34/37页
文件大小: 490K
代理商: MPSA70RL
MPSA70
2–663
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 17. Thermal Response
t, TIME (ms)
1.0
0.01
r(t)
TRANSIENT
THERMAL
RESIST
ANCE
(NORMALIZED)
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1.0 k 2.0 k
5.0 k 10 k
20 k
50 k 100 k
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
DUTY CYCLE, D = t1/t2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1 (SEE AN–569)
Z
θJA(t) = r(t) RθJA
TJ(pk) – TA = P(pk) Z
θJA(t)
t1
t2
P(pk)
FIGURE 19
Figure 18. Active–Region Safe Operating Area
TJ, JUNCTION TEMPERATURE (°C)
104
–4
0
I C
,COLLECT
OR
CURRENT
(nA)
Figure 19. Typical Collector Leakage Current
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
400
2.0
I C
,COLLECT
OR
CURRENT
(mA)
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
A train of periodical power pulses can be represented by the model
as shown in Figure 19. Using the model and the device thermal
response the normalized effective transient thermal resistance of
Figure 17 was calculated for various duty cycles.
To find Z
θJA(t), multiply the value obtained from Figure 17 by the
steady state value R
θJA.
Example:
Dissipating 2.0 watts peak under the following conditions:
t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2)
Using Figure 17 at a pulse width of 1.0 ms and D = 0.2, the reading of
r(t) is 0.22.
The peak rise in junction temperature is therefore
T = r(t) x P(pk) x RθJA = 0.22 x 2.0 x 200 = 88°C.
For more information, see AN–569.
The safe operating area curves indicate IC–VCE limits of the
transistor that must be observed for reliable operation. Collector load
lines for specific circuits must fall below the limits indicated by the
applicable curve.
The data of Figure 18 is based upon TJ(pk) = 150°C; TC or TA is
variable depending upon conditions. Pulse curves are valid for duty
cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from
the data in Figure 17. At high case or ambient temperatures, thermal
limitations will reduce the power than can be handled to values less
than the limitations imposed by second breakdown.
10–2
10–1
100
101
102
103
–2
0
+ 20
+ 40
+ 60
+ 80 + 100 + 120 + 140 + 160
VCC = 30 V
ICEO
ICBO
AND
ICEX @ VBE(off) = 3.0 V
TA = 25°C
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
1.0 ms
10
s
TC = 25°C
1.0 s
dc
4.0
6.0
10
20
40
60
100
200
4.0
6.0
8.0 10
20
40
TJ = 150°C
100
s
相关PDF资料
PDF描述
MPSA70RL1 100 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPSA92J18Z 500 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR
MPSA92L34Z 500 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPSA92D75Z 500 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPSA92D27Z 500 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
相关代理商/技术参数
参数描述
MPSA70RLRM 功能描述:两极晶体管 - BJT 100mA 40V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MPSA70RLRMG 功能描述:两极晶体管 - BJT 100mA 40V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MPSA75 制造商:CENTRAL 制造商全称:Central Semiconductor Corp 功能描述:Small Signal Transistors
MPSA75_06 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Darlington Transistors PNP Silicon
MPSA75RLRA 功能描述:达林顿晶体管 500mA 40V PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel