参数资料
型号: MPSA70RL1
厂商: ON SEMICONDUCTOR
元件分类: 小信号晶体管
英文描述: 100 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封装: PLASTIC, TO-226AA, 3 PIN
文件页数: 23/37页
文件大小: 490K
代理商: MPSA70RL1
MPSA70
2–660
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL NOISE CHARACTERISTICS
(VCE = –5.0 Vdc, TA = 25°C)
Figure 1. Noise Voltage
f, FREQUENCY (Hz)
5.0
7.0
10
3.0
Figure 2. Noise Current
f, FREQUENCY (Hz)
1.0
10
20
50
100
200
500
1.0 k
2.0 k
5.0 k
10 k
1.0
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.1
BANDWIDTH = 1.0 Hz
RS ≈ 0
IC = 10 A
100
A
e
n
,NOISE
VOL
TAGE
(nV)
I n
,NOISE
CURRENT
(pA)
30
A
BANDWIDTH = 1.0 Hz
RS ≈∞
IC = 1.0 mA
300
A
100
A
30
A
10
A
10
20
50
100
200
500
1.0 k 2.0 k
5.0 k
10 k
2.0
1.0 mA
0.2
300
A
NOISE FIGURE CONTOURS
(VCE = –5.0 Vdc, TA = 25°C)
500 k
100
200
500
1.0 k
10 k
5.0 k
20 k
50 k
100 k
200 k
2.0 k
1.0 M
500 k
100
200
500
1.0 k
10 k
5.0 k
20 k
50 k
100 k
200 k
2.0 k
1.0 M
Figure 3. Narrow Band, 100 Hz
IC, COLLECTOR CURRENT (A)
Figure 4. Narrow Band, 1.0 kHz
IC, COLLECTOR CURRENT (A)
10
0.5 dB
BANDWIDTH = 1.0 Hz
R
S
,SOURCE
RESIST
ANCE
(OHMS)
R
S
,SOURCE
RESIST
ANCE
(OHMS)
Figure 5. Wideband
IC, COLLECTOR CURRENT (A)
10
10 Hz to 15.7 kHz
R
S
,SOURCE
RESIST
ANCE
(OHMS)
Noise Figure is Defined as:
NF
+ 20 log10
en2 ) 4KTRS ) In
2RS2
4KTRS
1 2
= Noise Voltage of the Transistor referred to the input. (Figure 3)
= Noise Current of the Transistor referred to the input. (Figure 4)
= Boltzman’s Constant (1.38 x 10–23 j/
°K)
= Temperature of the Source Resistance (
°K)
= Source Resistance (Ohms)
en
In
K
T
RS
1.0 dB
2.0 dB
3.0 dB
20
30
50 70 100
200 300
500 700 1.0 k
10
20
30
50 70 100
200 300
500 700 1.0 k
500 k
100
200
500
1.0 k
10 k
5.0 k
20 k
50 k
100 k
200 k
2.0 k
1.0 M
20
30
50
70
100
200 300
500 700 1.0 k
BANDWIDTH = 1.0 Hz
5.0 dB
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
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