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参数资料
| 型号： | MPSA65D26Z |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1200 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 文件页数： | 6/13页 |
| 文件大小： | 616K |
| 代理商： | MPSA65D26Z |
MPSA65
/
MMBT
A65
/
PZT
A65
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
V(BR)CES
Collector-Em itter Breakdown
Voltage
IC = 100
A, IB = 0
30
V
ICBO
Collector-Cutoff Current
VCB = 30 V, IE = 0
100
nA
IEBO
Em itter-Cutoff Current
VEB = 8.0 V, IC = 0
100
nA
ON CHARACTERISTICS*
hFE
DC Current Gain
IC = 10 mA, VCE = 5.0 V
IC = 100 mA, VCE = 5.0 V
50,000
20,000
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 100 mA, IB = 0.1 mA
1.5
V
VBE(on)
Base-Emitter On Voltage
IC = 100 mA, VCE = 5.0 V
2.0
V
SMALL SIGNAL CHARACTERISTICS
*Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%
fT
Current Gain - Bandwidth Product
IC = 10 mA, VCE = 5.0 V,
f = 100 MHz
100
MHz
PNP Darlington Transistor
(continued)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MPSA66 | 制造商:FLORIDA MISC. 功能描述: |
| MPS-A66 | 制造商:MICRO-ELECTRONICS 制造商全称:Micro Electronics 功能描述:SILICON PLANAR EPITAXIAL DARLINGTON RANSISTORS |
| MPSA70 | 功能描述:两极晶体管 - BJT PNP Gen Pur RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MPS-A70 | 制造商:MICRO-ELECTRONICS 制造商全称:Micro Electronics 功能描述:COMPLEMENTARY SILICON AF SMALL SIGNAL TRANSISTORS |
| MPSA70_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Amplifier Transistor PNP Silicon |
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