参数资料
型号: MIC5021YM TR
厂商: Micrel Inc
文件页数: 3/10页
文件大小: 0K
描述: IC DRIVER MOSFET HISIDE HS 8SOIC
标准包装: 1
配置: 高端
输入类型: 非反相
延迟时间: 500ns
配置数: 1
输出数: 1
电源电压: 12 V ~ 36 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOIC
包装: 标准包装
产品目录页面: 1110 (CN2011-ZH PDF)
其它名称: 576-1239-6
MIC5021
Absolute Maximum Ratings
Supply Voltage (V DD ) ................................................... +40V
Input Voltage .................................................–0.5V to +15V
Sense Differential Voltage .......................................... ±6.5V
Sense + or Sense – to Gnd ...........................–0.5V to +36V
Micrel, Inc.
Operating Ratings
Supply Voltage (V DD ) ..................................... +12V to +36V
Temperature Range
PDIP ..................................................................... –40°C to +85°C
SOIC ...................................................... –40°C to +85°C
Timer Voltage (C T ) ...................................................... +5.5V
V BOOST Capacitor ..................................................... 0.01μF
Electrical Characteristics
T A = 25°C, Gnd = 0V, V DD = 12V, C T = Open, Gate C L = 1500pF (IRF540 MOSFET) unless otherwise speci?ed
Symbol
Parameter
D.C. Supply Current
Input Threshold
Condition
V DD = 12V, Input = 0V
V DD = 36V, Input = 0V
V DD = 12V, Input = 5V
V DD = 36V, Input = 5V
Min
0.8
Typ
1.8
2.5
1.7
2.5
1.4
Max
4
6
4
6
2.0
Units
mA
mA
mA
mA
V
Input Hysteresis
0.1
V
Input Pull-Down Current
Current Limit Threshold
Input = 5V
Note 1
10
30
20
50
40
70
μA
mV
t G(ON)
t G(OFF)
t DLH
t R
t DLH
t F
f max
Gate On Voltage
Gate On Time, Fixed
Gate Off Time, Adjustable
Gate Turn-On Delay
Gate Rise Time
Gate Turn-Off Delay
Gate Fall Time
Maximum Operating Frequency
V DD = 12V Note 2
V DD = 36V Note 2
Sense Differential > 70mV
Sense Differential > 70mV, C T = 0pF
Note 3
Note 4
Note 5
Note 6
Note 7
16
46
2
10
100
18
50
6
20
500
400
800
400
150
21
52
10
50
1000
500
1500
500
V
V
μs
μs
ns
ns
ns
ns
kHz
Note 1
Note 2
Note 3
Note 4
Note 5
Note 6
Note 7
When using sense MOSFETs, it is recommended that R SENSE < 50Ω. Higher values may affect the sense MOSFET’s current transfer ratio.
DC measurement.
Input switched from 0.8V (TTL low) to 2.0V (TTL high), time for Gate transition from 0V to 2V.
Input switched from 0.8V (TTL low) to 2.0V (TTL high), time for Gate transition from 2V to 17V.
Input switched from 2.0V (TTL high) to 0.8V (TTL low), time for Gate transition from 20V (Gate on voltage) to 17V.
Input switched from 2.0V (TTL high) to 0.8V (TTL low), time for Gate transition from 17V to 2V.
Frequency where gate on voltage reduces to 17V with 50% input duty cycle.
July 2005
3
MIC5021
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