参数资料
型号: MG150J7KS61
厂商: Powerex Inc
文件页数: 3/6页
文件大小: 0K
描述: IGBT MOD CMPCT 600V 150A
标准包装: 1
系列: IGBTMOD™
配置: 三相反相器,带制动器
电压 - 集电极发射极击穿(最大): 600V
Vge, Ic时的最大Vce(开): 2.3V @ 15V,150A
电流 - 集电极 (Ic)(最大): 150A
电流 - 集电极截止(最大): 1mA
Vce 时的输入电容 (Cies): 30nF @ 10V
功率 - 最大: 750W
输入: 标准
NTC 热敏电阻:
安装类型: 底座安装
封装/外壳: 模块
供应商设备封装: 模块
POWEREX, INC., 200 E. HILLIS STREET, YOUNGWOOD, PENNSYLVANIA 15697-1800 (724) 925-7272
MG150J7KS61
SIX IGBTMOD? + BRAKE
COMPACT IGBT SERIES MODULE
150 AMPERES/600 VOLTS
ELECTRICAL AND MECHANICAL CHARACTERISTICS, T j = 25°C unless otherwise speci?ed
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
IGBT INVERTER SECTOR
GATE LEAKAGE CURRENT
COLLECTOR-EMITTER CUTOFF CURRENT
GATE-EMITTER CUTOFF VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE
INPUT CAPACITANCE
INDUCTIVE LOAD
SWITCHING
TIMES
REVERSE RECOVERY TIME
EMITTER-COLLECTOR VOLTAGE
I GES
I CES
V GE(OFF)
V CE(SAT)
C IES
T D(ON)
T OFF
T F
T RR
V E
V GE = 20V, V CE = 0
V CE = 600, V GE = 0
V CE = 5V, I C = 150MA
V GE = 15V, I C = 150A, T J = 25°C
V GE = 15V, I C = 200A, T J = 125°C
V CE = 10V, V GE = 0, F = 1MHZ
V CC = 300V, I C = 150A,
V GE = ±15V, R G = 15 Ω
I E = 150A
5.0
6.5
1.8
30,000
2.4
±500
1.0
8.0
2.3
2.5
1.0
1.2
0.5
0.3
2.8
NA
MA
VOLTS
VOLTS
VOLTS
PF
μS
μS
μS
μS
VOLTS
IGBT BRAKE SECTOR
GATE LEAKAGE CURRENT
COLLECTOR-EMITTER CUTOFF CURRENT
GATE-EMITTER CUROFF VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE
INPUT CAPACITANCE
INDUCTIVE LOAD
SWITCHING
TIMES
REVERSE RECOVERY CURRENT
EMITTER-COLLECTOR VOLTAGE
I GES
I CES
V GE(OFF)
V CE(SAT)
C IES
T D(ON)
T OFF
T F
I R
V E
V GE = ±20V, V CE = 0
V CE = 600, V GE = 0
V CE = 5V, I C = 75MA
V GE = 15V, I C = 75A, T J = 25°C
V GE = 15V, I C = 75A, T J = 125°C
V CE = 10V, V GE = 0, F = 1MHZ
V CC = 300V, I C = 75A,
V GE = ±15V, R G = 24 Ω
V R = 600V
I E = 75A
5.0
6.5
1.8
15,000
2.1
±500
1.0
8.0
2.2
2.2
1.0
1.2
0.5
1.0
2.6
NA
MA
VOLTS
VOLTS
VOLTS
PF
μS
μS
μS
MA
VOLTS
THERMAL CHARACTERISTICS
Characteristic
ZERO POWER RESISTANCE
B VALUE
JUNCTION TO CASE THERMAL RESISTANCE
CONTACT THERMAL RESISTANCE
Symbol
R25
B25/85
R TH(J-C)Q
R TH(J-C)D
R TH(J-C)Q
R TH(J-C)D
R TH(C-F)
Condition
I TM = 0.2MA
T C = 25°C/T C = 85°C
INVERTERIGBT (PER 1/6 MODULE)
INVERTER FWDI (PER 1/6 MODULE)
BRAKE IGBT (PER 1/6 MODULE)
BRAKE FWDI (PER 1/6 MODULE)
Min.
Typ.
100
4390
0.05
Max.
0.167
0.313
0.333
1.000
Units
K Ω
K
°C/WATT
°C/WATT
°C/WATT
°C/WATT
°C/WATT
RECOMMENDED CONDITIONS FOR USE
Characteristic
SUPPLY VOLTAGE
Symbol
V CC
Condition
APPLIED ACROSS P-N TERMINALS
Value
≤ 400
Units
VOLTS
GATE VOLTAGE
V GE
13.5 ^ 16.5 VOLTS
SWITCHING FREQUENCY
F C
0 ^ 20
KHZ
5/05
3
相关PDF资料
PDF描述
MG200J6ES61 IGBT MOD CMPCT 600V 200A
MG200Q2YS60A IGBT MOD CMPCT DUAL 1200V 200A
MG300Q2YS60A IGBT MOD CMPCT DUAL 1200V 300A
MG400J2YS61A IGBT MOD CMPCT DUAL 600V 400A
MG400Q2YS60A IGBT MOD CMPCT DUAL 1200V 400A
相关代理商/技术参数
参数描述
MG150M2YK1 制造商:n/a 功能描述:IGBT Module
MG150M2YL1 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR MODULES
MG150N2YK1 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR MODULES
MG150N2YL1 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR MODULES
MG150Q1JS40 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:N CHANNEL IGBT (HIGH POWER SWITCHING, CHOPPER APPLICATIONS)