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参数资料
| 型号： | MEK350-02DA |
| 厂商： | IXYS |
| 文件页数： | 1/2页 |
| 文件大小： | 0K |
| 描述： | DIODE FRED 200V 356A 150NS |
| 产品目录绘图： | Module Y4-M6 |
| 标准包装： | 5 |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 1.07V @ 260A |
| 电流 - 在 Vr 时反向漏电： | 3mA @ 200V |
| 电流 - 平均整流 (Io)（每个二极管）： | 356A |
| 电压 - (Vr)（最大）： | 200V |
| 反向恢复时间(trr)： | 200ns |
| 二极管类型： | 标准 |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 二极管配置： | 1 对共阴极 |
| 安装类型： | 底座安装 |
| 封装/外壳： | Y4-M6 |
| 供应商设备封装： | Y4-M6 |
| 包装： | 散装 |
| 其它名称： | Q1147009 |
Fast Recovery
Epitaxial Diode
MEK 350-02 DA
V RRM = 200 V
I FAVM = 356 A
(FRED) Module
t rr
= 150 ns
V RSM
V RRM
Type
1
2
3
1
2
3
V
V
200
200
MEK 350-02DA
Symbol
Test Conditions
Maximum Ratings
International standard package
I FRMS
I FAVM x
I FRM
T C = 75 ° C
T C = 75 ° C; rectangular, d = 0.5
t P < 10 m s; rep. rating, pulse width limited by T VJM
503
356
1800
A
A
A
Features
q
with DCB ceramic base plate
I FSM
T VJ = 45 ° C;
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
2400
2640
A
A
q
q
Planar passivated chips
Short recovery time
I 2 t
T VJ = 150 ° C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
T VJ = 45 ° C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
2160
2380
28800
29300
A
A
A 2 s
A 2 s
q
q
q
q
Low switching losses
Soft recovery behaviour
Isolation voltage 3600 V~
UL registered E 72873
Antiparallel diode for high frequency
T VJ = 150 ° C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
23300
23800
A 2 s
A 2 s
Applications
q
T VJ
T stg
T Smax
-40...+150
-40...+125
110
° C
° C
° C
q
switching devices
Free wheeling diode in converters
and motor control circuits
P tot
V ISOL
T C = 25 ° C
50/60 Hz, RMS t = 1 min
I ISOL ￡ 1 mA t = 1 s
875
3000
3600
W
V~
V~
q
q
q
Inductive heating and melting
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
High reliability circuit operation
M d
Mounting torque (M6)
Terminal connection torque (M6)
2.25-2.75/20-25 Nm/lb.in.
4.50-5.50/40-48 Nm/lb.in.
Advantages
q
d S
d A
a
Weight
Creeping distance on surface
Strike distance through air
Maximum allowable acceleration
12.7
9.6
50
150
mm
mm
m/s 2
g
q
q
q
Low voltage peaks for reduced
protection circuits
Low noise switching
Low losses
Symbol
Test Conditions
Characteristic Values (per diode)
Dimensions in mm (1 mm = 0.0394")
typ. max.
I R
T VJ = 25 ° C
T VJ = 25 ° C
T VJ = 125 ° C
V R = V RRM
V R = 0.8 ? V RRM
V R = 0.8 ? V RRM
3
2
80
mA
mA
mA
V F
I F = 150 A;
I F = 260 A;
T VJ
T VJ
T VJ
T VJ
= 125 ° C
= 25 ° C
= 125 ° C
= 25 ° C
0.80
0.98
0.92
1.07
V
V
V
V
V T0
r T
R thJH
R thJC
For power-loss calculations only
DC current
DC current
0.53
1.29
0.228
0.143
V
m W
K/W
K/W
t rr
I RM
I F = 300 A
V R = 100 V
-di/dt = 200 A/ m s
T VJ = 100 ° C
T VJ = 25 ° C
T VJ = 100 ° C
150
200
9
15
ns
A
A
x I FAVM rating includes reverse blocking losses at T VJM , V R = 0.6 V RRM , duty cycle d = 0.5
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
? 2000 IXYS All rights reserved
1-2
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