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参数资料
| 型号： | MCP1631VT-E/ST |
| 厂商： | Microchip Technology |
| 文件页数： | 16/34页 |
| 文件大小： | 0K |
| 描述： | IC REG CTRLR ISO PWM VM 20-TSSOP |
| 标准包装： | 2,500 |
| PWM 型： | 电压模式 |
| 输出数： | 1 |
| 频率 - 最大： | 2MHz |
| 占空比： | 10% |
| 电源电压： | 3 V ~ 5.5 V |
| 降压： | 是 |
| 升压： | 无 |
| 回扫： | 无 |
| 反相： | 无 |
| 倍增器： | 无 |
| 除法器： | 无 |
| Cuk： | 无 |
| 隔离： | 是 |
| 工作温度： | -40°C ~ 125°C |
| 封装/外壳： | 20-TSSOP（0.173"，4.40mm 宽） |
| 包装： | 带卷 (TR) |
| 其它名称： | MCP1631VT-E/STTR |
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MCP1631/HV/MCP1631V/VHV
3.7
Analog Ground (A GND )
3.15
Current Sense Output (IS OUT )
Quiet or analog ground, connect to analog ground
plane to minimize noise on sensitive MCP1631
circuitry.
Current sense amplifier output, connect to error
amplifier (A1) inverting input (FB) to regulate SEPIC
output current.
3.8
No Connection (NC)
3.16
Error Amplifier Output (COMP)
No connection.
Error amplifier (A1) output, connect control loop
compensation from FB input to COMP output pin.
3.9 Input Voltage (V IN )
High voltage input for MCP1631HV/MCP1631VHV
3.17
Feedback (FB)
devices, operates from 3.5V to 16V input supply.
Error amplifier input (A1), connect to current sense
output amplifier (A2) to regulate current.
3.10 Analog supply Input (A VDD_IN )
Analog bias input, minimum 3.0V to 5.5V operation for
MCP1631/MCP1631V devices.
3.18
Current Sense or Voltage Ramp
(CS/V RAMP )
3.11 Analog Supply Output (A VDD_OUT )
Regulated V DD output used to power internal
MCP1631HV/MCP1631VHV and external
microcontroller, supplies up to 250 ma of bias current at
For MCP1631/MCP1631HV applications, connect to
low side current sense of SEPIC switch for current
mode control and peak current limit. For MCP1631/
MCP1631HV application, connect artificial ramp
voltage to V RAMP input for voltage mode PWM control.
3.3V or 5.0V regulated low drop out rail.
3.19
Power VDD (P VDD )
3.12 Voltage Sense Input (VS IN )
Voltage sense amplifier (A3) input, connect to high
impedance battery voltage resistor divider to sense
battery voltage with minimal loading.
Power V DD input, V EXT gate drive supply input, connect
to +5.0V or +3.3V supply for driving external MOSFET.
3.20 External Driver (V EXT )
High current driver output used to drive external
3.13
Current Sense Input (IS IN )
MOSFET at high frequency, capable of 1A peak
currents with +5.0V P VDD .
Connect to SEPIC secondary side sense resistor to
develop a regulated current source used to charge
3.21
Exposed PAD 4x4 QFN (EP)
multi-chemistry batteries.
3.14 Voltage Sense Output (VS OUT )
Voltage sense amplifier output, connect to
microcontroller analog to digital converter to measure
battery voltage.
DS22063B-page 16
There is an internal electrical connection between the
Exposed Thermal Pad (EP) and the A GND pin; they
must be connected to the same potential on the Printed
Circuit Board (PCB).
? 2008 Microchip Technology Inc.
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