- 您现在的位置：买卖IC网 > PDF目录19365 > IRS2573DSTRPBF (International Rectifier)IC BALLAST CRL HID 600V 28-SOIC PDF资料下载
参数资料
| 型号： | IRS2573DSTRPBF |
| 厂商： | International Rectifier |
| 文件页数： | 22/28页 |
| 文件大小： | 0K |
| 描述： | IC BALLAST CRL HID 600V 28-SOIC |
| 标准包装： | 1 |
| 类型： | HID 灯控制器 |
| 频率： | 160 ~ 240 Hz |
| 电流 - 电源： | 10mA |
| 电流 - 输出： | 260mA |
| 电源电压： | 9.5 V ~ 16.6 V |
| 工作温度： | -40°C ~ 125°C |
| 封装/外壳： | 28-SOIC（0.295"，7.50mm 宽） |
| 供应商设备封装： | 28-SOIC W |
| 包装： | 标准包装 |
| 其它名称： | IRS2573DSTRPBFDKR |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页当前第22页第23页第24页第25页第26页第27页第28页
IRS2573D
Figure 9: Antenna Loops
Supply Capacitor: It is recommended to place a bypass capacitor (C IN ) between the V CC and V SS pins. A
ceramic 1 μ F ceramic capacitor is suitable for most applications. This component should be placed as close as
possible to the pins in order to reduce parasitic elements.
Routing and Placement:
Power stage PCB parasitic elements can contribute to large negative voltage transients
as the switch node; it is recommended to limit the phase voltage negative transients. In order to avoid such
conditions, it is recommended to 1) minimize the high-side emitter to low-side collector distance, and 2) minimize
the low-side emitter to negative bus rail stray inductance. However, where negative V S spikes remain excessive,
further steps may be taken to reduce the spike. This includes placing a resistor (5 ? or less) between the V S pin
and the switch node (see Figure 10), and in some cases using a clamping diode between V SS and V S (see Figure
11). See DT04-4 at www.irf.com for more detailed information.
Figure 10: V S resistor
Figure 11: V S clamping diode
Additional Documentation
Several technical documents related to the use of HVICs are available at www.irf.com ; use the Site Search
function and the document number to quickly locate them.
Below is a short list of some of these documents.
DT97-3: Managing Transients in Control IC Driven Power Stages
AN-1123: Bootstrap Network Analysis: Focusing on the Integrated Bootstrap Functionality
DT04-4: Using Monolithic High Voltage Gate Drivers
AN-978: HV Floating MOS-Gate Driver ICs
www.irf.com
22
? 2009 International Rectifier
相关PDF资料 |
PDF描述 |
|---|---|
| EMA43DTAN | CONN EDGECARD 86POS R/A .125 SLD |
| EMC06DRYH-S13 | CONN EDGECARD 12POS .100 EXTEND |
| MC78M05ACDTRK | IC REG LDO 5V .5A DPAK |
| DS18B20Z+T&R | IC THERM MICROLAN PROG-RES 8SOIC |
| 1N5402RLG | DIODE STD REC 3A 200V DO201AD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRS25801DSTRPBF | 制造商:International Rectifier 功能描述:600V 999.000A SOIC - Tape and Reel 制造商:International Rectifier 功能描述:IC POWER FACTOR CORRECT PFC |
| IRS25803DSPBF | 制造商:International Rectifier 功能描述:CIC SOIC-8N - Tape and Reel 制造商:International Rectifier 功能描述:SEMICONDUCTOR OTHER 制造商:International Rectifier 功能描述:Fluorescent PFC 305VAC SOIC |
| IRS25803DSTRPBF | 制造商:International Rectifier 功能描述:CIC SOIC-8N - Tape and Reel 制造商:International Rectifier 功能描述:SEMICONDUCTOR OTHER 制造商:International Rectifier 功能描述:Fluorescent PFC 305VAC SOIC |
| IRS2580DSPBF | 功能描述:功率驱动器IC COMPBO8 PFC HALF-BRDG BALLAST IC RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IRS2580DSTRPBF | 功能描述:功率驱动器IC Fluorescent PFC + Ballast Combo IC RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。