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| 型号： | IR2521DSTRPBF |
| 厂商： | International Rectifier |
| 文件页数： | 9/17页 |
| 文件大小： | 0K |
| 描述： | IC BALLAST CTLR ADAPTIVE 8-SOIC |
| 标准包装： | 1 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 标准包装 |
| 其它名称： | IR2521DSTRPBFDKR |
IR2520D(S) & (PbF)
lamp removal (open circuit), a dropping DC bus during a
mains brown-out or mains interrupt, lamp variations over
time, or component variations. To protect against this, an
internal high-voltage MOSFET is turned on at the turn-off of
HO and the VS-sensing circuit measures VS at each rising
edge of LO. If the VS voltage is non-zero, a pulse of current
is sinked from the VCO pin (Figures 5 and 6) to slightly
discharge the external capacitor, CVCO, causing the
frequency to increase slightly. The VCO capacitor then
charges up during the rest of the cycle slowly due to the
open circuit (Figure 7). This will cause capacitive switching
(hard-switching) resulting in high peak MOSFET currents
that can damage them. The IR2520D will increase the fre-
quency in attempt to satisfy ZVS until the VCO pin de-
creases below 0.82V (V VCOSD ). The IC will enter Fault
Mode and latch the LO and HO gate driver outputs ‘low’ for
turning the half-bridge off safely before any damage can
occur to the MOSFETs.
internal current source.
V LO
V HO
!
V VS
V LO
V HO
V VS
IMLS
!
!
RUN MODE
FAULT MOD E
IL
IMHS
IMLS
!
IMHS
VVCO
0.85V
VVCO
!
Capacitive switching. Hard-switching
and high peak MOSFET currents!
Frequency shifted higher
until VCO < 0.82V. LO and
HO are latched low before
damage occurs to MOSFETs.
!
Too close to resonance.
Hard-switching and high
peak MOSFET currents!
Frequency shifted higher
to maintain ZVS.
Fig. 7 Lamp removal or open filament fault
condition timing diagram
Fig. 6 IR2520D non-ZVS protection timing diagram.
The frequency is trying to decrease towards resonance
by charging the VCO capacitor and the adaptive ZVS cir-
cuit “nudges” the frequency back up slightly above reso-
nance each time non-ZVS is detected at the turn-on of LO.
The internal high-voltage MOSFET is then turned off at the
turn-off of LO and it withstands the high-voltage when VS
slews up to the DC bus potential. The circuit then remains in
this closed-loop adaptive ZVS mode during running and
maintains ZVS operation with changing line conditions, com-
ponent tolerance variations and lamp/load variations. Dur-
ing a lamp removal or filament failure, the lamp resonant
tank will be interrupted causing the half-bridge output to go
www.irf.com
Crest Factor Over-current Protection
During normal lamp ignition, the frequency sweeps through
resonance and the output voltage increases across the
resonant capacitor and lamp until the lamp ignites. If the
lamp fails to ignite, the resonant capacitor voltage, the inductor
voltage and inductor current will continue to increase until
the inductor saturates or the output voltage exceeds the
maximum voltage rating of the resonant capacitor or inductor.
The ballast must shutdown before damage occurs. To
protect against a lamp non-strike fault condition, the IR2520D
uses the VS-sensing circuitry (Figure 5) to also measure
the low-side half-bridge MOSFET current for detecting an
9
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IR25600PBF | 功能描述:功率驱动器IC Dual Low Side Driver 6V to 20V 1.5A 85ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IR25600SPBF | 功能描述:功率驱动器IC Dual Low Side Driver 6V to 20V 1.5A 85ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IR25600SPBF | 制造商:International Rectifier 功能描述:DRIVER, MOSFET/IGBT, LOW SIDE, SOIC-8 |
| IR25600STRPBF | 功能描述:功率驱动器IC Dual Low Side Driver 6V to 20V 1.5A 85ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IR25601SPBF | 功能描述:功率驱动器IC 2Ch 600V Half Bridge 60mA 10-20V 50ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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