参数资料
型号: IDT70V3579S5BF
厂商: IDT, Integrated Device Technology Inc
文件页数: 12/17页
文件大小: 0K
描述: IC SRAM 1.125MBIT 5NS 208FBGA
标准包装: 7
格式 - 存储器: RAM
存储器类型: SRAM - 双端口,同步
存储容量: 1.125M(32K x 36)
速度: 5ns
接口: 并联
电源电压: 3.15 V ~ 3.45 V
工作温度: 0°C ~ 70°C
封装/外壳: 208-LFBGA
供应商设备封装: 208-CABGA(15x15)
包装: 托盘
其它名称: 70V3579S5BF
IDT70V3579S
High-Speed 32K x 36 Dual-Port Synchronous Pipelined Static RAM
Industrial and Commercial Temperature Ranges
Timing Waveform of Left Port Write to Pipelined Right Port Read (1,2)
CLK L
R/ W L
t SW
t SA
t HW
t HA
ADDRESS L
DATA INL
MATCH
t SD
t HD
VALID
NO
MATCH
t CO (3)
CLK R
t CD2
R/ W R
t SW
t SA
t HW
t HA
ADDRESS R
DATA OUTR
MATCH
NO
MATCH
VALID
t DC
4830 drw 08
NOTES:
1. CE 0 , BE n , and ADS = V IL ; CE 1 , CNTEN , and CNTRST = V IH .
2. OE = V IL for the Right Port, which is being read from. OE = V IH for the Left Port, which is being written to.
3. If t CO < minimum specified, then data from right port read is not valid until following right port clock cycle (ie, time from write to valid read on opposite port will
be t CO + 2 t CYC2 + t CD2 ). If t CO > minimum, then data from right port read is available on first right port clock cycle (ie, time from write to valid read on opposite
port will be t CO + t CYC2 + t CD2 ).
Timing Waveform of Pipelined Read-to-Write-to-Read
( OE = V IL ) (2) t CYC2
t CH2 t CL2
CLK
CE 0
CE 1
t SC
t SB
t HC
t HB
BE n
t SW t HW
R/ W
t SW t HW
(3)
ADDRESS
An
An +1
An + 2
An + 2
An + 3
An + 4
DATA IN
t SA
t HA
t SD t HD
Dn + 2
DATA OUT
(1)
t CD2
Qn
t CKHZ
t CKLZ
t CD2
Qn + 3
READ
NOP
(4)
WRITE
READ
4830 drw 09
NOTES:
1. Output state (High, Low, or High-impedance) is determined by the previous cycle control signals.
2. CE 0 , BE n , and ADS = V IL ; CE 1 , CNTEN , and CNTRST = V IH . "NOP" is "No Operation".
3. Addresses do not have to be accessed sequentially since ADS = V IL constantly loads the address on the rising edge of the CLK; numbers
are for reference use only.
4. "NOP" is "No Operation." Data in memory at the selected address may be corrupted and should be re-written to guarantee data integrity.
12
6.42
相关PDF资料
PDF描述
HMM44DREH CONN EDGECARD 88POS .156 EYELET
KMPC885ZP133 IC MPU POWERQUICC 133MHZ 357PBGA
IDT70V3389S5BF IC SRAM 1.125MBIT 5NS 208FBGA
ASM43DREI CONN EDGECARD 86POS .156 EYELET
KMPC885VR80 IC MPU POWERQUICC 80MHZ 357PBGA
相关代理商/技术参数
参数描述
IDT70V3579S5BF8 功能描述:IC SRAM 1.125MBIT 5NS 208FBGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,同步 存储容量:1.125M(32K x 36) 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA(17x17) 包装:带卷 (TR) 其它名称:70V3579S5BCI8
IDT70V3579S5BFI 功能描述:IC SRAM 1.125MBIT 5NS 208FBGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商设备封装:8-SOIC 包装:带卷 (TR)
IDT70V3579S5BFI8 功能描述:IC SRAM 1.125MBIT 5NS 208FBGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商设备封装:8-SOIC 包装:带卷 (TR)
IDT70V3579S5DR 功能描述:IC SRAM 1.125MBIT 5NS 208QFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商设备封装:8-SOIC 包装:带卷 (TR)
IDT70V3579S5DRI 功能描述:IC SRAM 1.125MBIT 5NS 208QFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商设备封装:8-SOIC 包装:带卷 (TR)