参数资料
型号: IDT70V28L20PF
厂商: IDT, Integrated Device Technology Inc
文件页数: 5/17页
文件大小: 0K
描述: IC SRAM 1MBIT 20NS 100TQFP
标准包装: 6
格式 - 存储器: RAM
存储器类型: SRAM - 双端口,异步
存储容量: 1M (64K x 16)
速度: 20ns
接口: 并联
电源电压: 3 V ~ 3.6 V
工作温度: 0°C ~ 70°C
封装/外壳: 100-LQFP
供应商设备封装: 100-TQFP(14x14)
包装: 托盘
其它名称: 70V28L20PF
IDT70V28L
High-Speed 3.3V 64K x 16 Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range (V CC = 3.3V ± 0.3V)
70V28L
Input Leakage Current
Symbol
|I LI |
|I LO |
V OL
V OH
Parameter
(1)
Output Leakage Current
Output Low Voltage
Output High Voltage
Test Conditions
V CC = 3.6V, V IN = 0V to V CC
CE (2) = V IH , V OUT = 0V to V CC
I OL = +4mA
I OH = -4mA
Min.
___
___
___
2.4
Max.
5
5
0.4
___
Unit
μA
μA
V
V
NOTES:
1. At Vcc < 2.0V, input leakages are undefined.
2. Refer to Truth Table I - Chip Enable .
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range (5) (V CC = 3.3V ± 0.3V)
70V28L15
Com'l Only
70V28L20
Com'l
& Ind
4849 tbl 09
Symbol
Parameter
Test Condition
Version
Typ. (1)
Max.
Typ. (1)
Max.
Unit
I CC
I SB1
Dynamic Operating
Current
(Both Ports Active)
Standby Current
(Both Ports - TTL Level
Inputs)
CE = V IL , Outputs Disabled
SEM = V IH
f = f MAX (2)
CE L = CE R = V IH
SEM R = SEM L = V IH
f = f MAX (2)
COM'L
IND
COM'L
IND
L
L
L
L
145
___
40
___
235
___
70
___
135
135
35
35
205
220
55
65
mA
mA
I SB2
Standby Current
CE "A" = V IL and CE "B" = V IH
(4)
COM'L
L
100
155
90
140
mA
(One Port - TTL Level
Inputs)
Active Port Outputs Disabled,
f=f MAX (2) , SEM R = SEM L = V IH
IND
L
___
___
90
150
I SB3
I SB4
Full Standby Current
(Both Ports - All CMOS
Level Inputs)
Full Standby Current
(One Port - All CMOS
Level Inputs)
Both Ports CE L and CE R > V CC - 0.2V,
V IN > V CC - 0.2V or V IN < 0.2V, f = 0 (3)
SEM R = SEM L > V CC - 0.2V
CE "A" < 0.2V and CE "B" > V CC - 0.2V (4) ,
SEM R = SEM L > V CC - 0.2V,
V IN > V CC - 0.2V or V IN < 0.2V,
Active Port Outputs Disabled , f = f MAX (2)
COM'L
IND
COM'L
IND
L
L
L
L
0.2
___
95
___
3.0
___
150
___
0.2
0.2
90
90
3.0
3.0
135
145
mA
mA
NOTES:
4849 tbl 10
1. V CC = 3.3V, T A = +25°C, and are not production tested. I CCDC = 90mA (Typ.)
2. At f = f MAX , address and control lines (except Output Enable) are cycling at the maximum frequency read cycle of 1/t RC, and using “AC Test Conditions" of input levels of GND
to 3V.
3. f = 0 means no address or control lines change.
4. Port "A" may be either left or right port. Port "B" is the opposite from port "A".
5. Refer to Truth Table I - Chip Enable.
5
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