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参数资料
| 型号： | IDT70V09L15PF8 |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 7/17页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 1MBIT 15NS 100TQFP |
| 标准包装： | 750 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 双端口，异步 |
| 存储容量： | 1M (128K x 8) |
| 速度： | 15ns |
| 接口： | 并联 |
| 电源电压： | 3 V ~ 3.6 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 100-LQFP |
| 供应商设备封装： | 100-TQFP（14x14） |
| 包装： | 带卷 (TR) |
| 其它名称： | 70V09L15PF8 |
IDT70V09L
High-Speed 128K x 8 Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage Range
70V09L15
Com'l Only
70V09L20
Com'l
& Ind
Symbol
Parameter
Min.
Max.
Min.
Max.
Unit
READ CYCLE
t RC
t AA
Read Cycle Time
Address Access Time
15
____
____
15
20
____
____
20
ns
ns
t ACE
Chip Enable Access Time
(3)
____
15
____
20
ns
t AOE
t OH
t LZ
t HZ
Output Enable Access Time
Output Hold from Address Change
Output Low-Z Time (1,2)
Output High-Z Time (1,2)
____
3
3
____
10
____
____
10
____
3
3
____
12
____
____
10
ns
ns
ns
ns
t PU
Chip Enab le to Power Up Time
(2)
0
____
0
____
ns
t PD
Chip Disable to Power Down Time
(2)
____
15
____
20
ns
t SOP
t SAA
Semaphore Flag Update Pulse ( OE or SEM )
Semaphore Address Access Time
10
____
____
15
10
____
____
20
ns
ns
4852 tbl 12
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage
70V09L15
Com'l Only
70V09L20
Com'l
& Ind
Symbol
Parameter
Min.
Max.
Min.
Max.
Unit
WRITE CYCLE
t WC
Write Cycle Time
15
____
20
____
ns
t EW
Chip Enable to End-of-Write
(3)
12
____
15
____
ns
t AW
Address Valid to End-of-Write
12
____
15
____
ns
t AS
Address Set-up Time
(3)
0
____
0
____
ns
t WP
t WR
t DW
t HZ
t DH
t WZ
Write Pulse Width
Write Recovery Time
Data Valid to End-of-Write
Output High-Z Time (1,2)
Data Hold Time (4)
Write Enable to Output in High-Z (1,2)
12
0
10
____
0
____
____
____
____
10
____
10
15
0
15
____
0
____
____
____
____
10
____
10
ns
ns
ns
ns
ns
ns
t OW
t SWRD
t SPS
Output Active from End-of-Write
SEM Flag Write to Read Time
SEM Flag Contention Window
(1,2,4)
0
5
5
____
____
____
0
5
5
____
____
____
ns
ns
ns
NOTES:
4852 tbl 13
1. Transition is measured 0mV from Low or High-impedance voltage with Output Test Load (Figure 2).
2. This parameter is guaranted by device characterization, but is not production tested.
3. To access RAM, CE = V IL and SEM = V IH . To access semaphore, CE = V IH and SEM = V IL . Either condition must be valid for the entire t EW time.
4. The specification for t DH must be met by the device supplying write data to the RAM under all operating conditions. Although t DH and t OW values will vary over voltage and
temperature, the actual t DH will always be smaller than the actual t OW .
7
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IDT70V09L15PFG | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 1MBIT 15NS 100TQFP |
| IDT70V09L15PFG8 | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 1MBIT 15NS 100TQFP |
| IDT70V09L20PF | 功能描述:IC SRAM 1MBIT 20NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，同步 存储容量:1.125M（32K x 36） 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA（17x17） 包装:带卷 (TR) 其它名称:70V3579S5BCI8 |
| IDT70V09L20PF8 | 功能描述:IC SRAM 1MBIT 20NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，同步 存储容量:1.125M（32K x 36） 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA（17x17） 包装:带卷 (TR) 其它名称:70V3579S5BCI8 |
| IDT70V09L20PFGI | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 1MBIT 20NS 100TQFP |
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