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| 型号： | IDT709169L9BF |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 5/16页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 144KBIT 9NS 100FBGA |
| 标准包装： | 60 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 双端口，同步 |
| 存储容量： | 144K（16K x 9） |
| 速度： | 9ns |
| 接口： | 并联 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 100-LFBGA |
| 供应商设备封装： | 100-CABGA（10x10） |
| 包装： | 托盘 |
| 其它名称： | 709169L9BF |
IDT709169/59L
High-Speed 16/8K x 9 Synchronous Pipelined Dual-Port Static RAM
Truth Table II—Address Counter Control (1,2)
Industrial and Commercial Temperature Ranges
Previous
Internal
L
External
Address
An
X
X
X
Internal
Address
X
An
An + 1
X
Address
Used
An
An + 1
An + 1
A 0
CLK
↑
↑
↑
↑
ADS
L (4)
H
H
X
CNTEN
X
L (5)
H
X
CNTRST
H
H
H
(4)
I/O (3)
D I/O (n)
D I/O (n+1)
D I/O (n+1)
D I/O (0)
MODE
External Address Used
Counter Enabled—Internal Address generation
External Address Blocked—Counter disab led (An + 1 reused)
Counter Reset to Address 0
5653 tbl 03
NOTES:
1. "H" = V IH, "L" = V IL, "X" = Don't Care.
2. CE 0 and OE = V IL ; CE 1 and R/ W = V IH .
3. Outputs configured in Flow-Through Output mode: if outputs are in Pipelined mode the data out will be delayed by one cycle.
4. ADS and CNTRST are independent of all other signals including CE 0 and CE 1 .
5. The address counter advances if CNTEN = V IL on the rising edge of CLK, regardless of all other signals including CE 0 and CE 1 .
Recommended Operating
Temperature and Supply Voltage
Recommended DC Operating
Conditions
Grade
Ambient
Temperature (1)
GND
Vcc
Symbol
Parameter
Min.
Typ.
Max.
Unit
V CC
Supply Voltage
4.5
5.0
5.5
V
Commercial
Industrial
0 O C to +70 O C
-40 O C to +85 O C
0V
0V
5.0V + 10%
5.0V + 10%
GND
V IH
Ground
Input High Voltage
0
2.2
0
____
0
6.0 (1)
V
V
5653 tbl 04
NOTES:
V IL
Input Low Voltage
-0.5 (2)
____
0.8
V
1. This is the parameter T A . This is the "instant on" case temperature.
NOTES:
1. V TERM must not exceed V cc + 10%.
2. V IL > -1.5V for pulse width less than 10ns.
5653 tbl 05
Absolute Maximum Ratings (1)
Symbol Rating Commercial
Unit
Capacitance (1)
(T A = +25°C, f = 1.0MH z )
& Industrial
Symbol
Parameter
Conditions (2)
Max.
Unit
V TERM
(2)
Terminal Voltage
with Respect
-0.5 to +7.0
V
C IN
Input Capacitance
V IN = 3dV
9
pF
C OUT
to GND
(3)
Output Capacitance
V OUT = 3dV
10
pF
T BIAS
T STG
Temperature
Under Bias
Storage
Temperature
-55 to +125
-65 to +150
o
o
C
C
5653 tbl 07
NOTES:
1. These parameters are determined by device characterization, but are not
production tested.
2. 3dV references the interpolated capacitance when the input and output switch from
0V to 3V or from 3V to 0V.
I OUT
DC Output
50
mA
3. C OUT also references C I/O .
Current
NOTES:
5653 tbl 06
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. V TERM must not exceed V cc + 10% for more than 25% of the cycle time or 10ns
maximum, and is limited to < 20mA for the period of V TERM > V cc + 10%.
5
6.42
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