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参数资料
| 型号： | HZS8.2NB1 |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 7.73 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-34 |
| 封装： | MHD, 2 PIN |
| 文件页数： | 4/7页 |
| 文件大小： | 31K |
| 代理商： | HZS8.2NB1 |
HZS-N Series
Electrical Characteristics (Ta = 25
°C) (cont)
Zener Voltage
Reverse Current
Dynamic Resistance
V
Z (V)*
Test
Condition
I
R (A)
Test
Condition
r
d ()
Test
Condition
Type
Grade
Min
Max
I
Z (mA)
Max
V
R (V)
Max
I
Z (mA)
HZS18N
B1
16.34
17.06
5
0.2
13
30
5
B2
16.90
17.67
B3
17.51
18.30
HZS20N
B1
18.14
18.96
5
0.2
15
30
5
B2
18.80
19.68
B3
19.52
20.45
HZS22N
B1
20.23
21.08
5
0.2
17
30
5
B2
20.76
21.65
B3
21.22
22.09
B4
21.68
22.61
HZS24N
B1
22.26
23.12
5
0.2
19
35
5
B2
22.75
23.73
B3
23.29
24.27
B4
23.81
24.81
HZS27N
B1
24.26
25.52
5
0.2
21
45
5
B2
24.97
26.26
B3
25.63
26.95
B4
26.29
27.64
HZS30N
B1
26.99
28.39
5
0.2
23
55
5
B2
27.70
29.13
B3
28.36
29.82
B4
29.02
30.51
HZS33N
B1
29.68
31.22
5
0.2
25
65
5
B2
30.32
31.88
B3
30.90
32.50
B4
31.49
33.11
HZS36N
B1
32.14
33.79
5
0.2
27
75
5
B2
32.79
34.49
B3
33.40
35.13
B4
34.01
35.77
Note:
Tested with pulse (P
W = 40ms)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HZS9 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply |
| HZS9.1NB1 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply |
| HZS9.1NB2 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply |
| HZS9.1NB3 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply |
| HZS9.1NB4 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply |
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