参数资料
型号: HZS39NB4
元件分类: 参考电压二极管
英文描述: 37.575 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-34
封装: MHD, 2 PIN
文件页数: 3/7页
文件大小: 31K
代理商: HZS39NB4
HZS-N Series
Electrical Characteristics (Ta = 25
°C) (cont)
Zener Voltage
Reverse Current
Dynamic Resistance
V
Z (V)*
Test
Condition
I
R (A)
Test
Condition
r
d ()
Test
Condition
Type
Grade
Min
Max
I
Z (mA)
Max
V
R (V)
Max
I
Z (mA)
HZS6.8N
B1
6.32
6.59
5
2
3.5
25
5
B2
6.52
6.79
B3
6.70
6.97
HZS7.5N
B1
6.88
7.19
5
0.5
4.0
25
5
B2
7.11
7.41
B3
7.33
7.64
HZS8.2N
B1
7.56
7.90
5
0.5
5.0
20
5
B2
7.82
8.15
B3
8.07
8.41
HZS9.1N
B1
8.33
8.70
5
0.5
6.0
20
5
B2
8.61
8.99
B3
8.89
9.29
HZS10N
B1
9.19
9.59
5
0.2
7.0
20
5
B2
9.48
9.90
B3
9.82
10.30
HZS11N
B1
10.18
10.63
5
0.2
8.0
20
5
B2
10.50
10.95
B3
10.82
11.26
HZS12N
B1
11.13
11.63
5
0.2
9.0
25
5
B2
11.50
11.92
B3
11.80
12.30
HZS13N
B1
12.18
12.71
5
0.2
10
25
5
B2
12.59
13.16
B3
13.03
13.62
HZS15N
B1
13.48
14.09
5
0.2
11
25
5
B2
13.95
14.56
B3
14.42
15.02
HZS16N
B1
14.87
15.50
5
0.2
12
25
5
B2
15.33
15.96
B3
15.79
16.50
Note:
Tested with pulse (P
W = 40ms)
相关PDF资料
PDF描述
HZS4.7NB3 4.81 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-34
HZS8.2NB1 7.73 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-34
HZU10B3TLF 10.33 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
HZU12B2TLF 11.99 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
HZU13B1TLF 12.75 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
相关代理商/技术参数
参数描述
HZS3A1 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply
HZS3A2 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply
HZS3A2TD 制造商:Renesas Electronics Corporation 功能描述:
HZS3A3 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply
HZS3ALL 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Hard Knee Low Noise