参数资料
型号: HUF75545P3
厂商: Fairchild Semiconductor
文件页数: 9/10页
文件大小: 0K
描述: MOSFET N-CH 80V 75A TO-220AB
产品培训模块: High Voltage Switches for Power Processing
产品目录绘图: MOSFET TO-220AB
标准包装: 400
系列: UltraFET™
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 80V
电流 - 连续漏极(Id) @ 25° C: 75A
开态Rds(最大)@ Id, Vgs @ 25° C: 10 毫欧 @ 75A,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 235nC @ 20V
输入电容 (Ciss) @ Vds: 3750pF @ 25V
功率 - 最大: 270W
安装类型: 通孔
封装/外壳: TO-220-3
供应商设备封装: TO-220AB
包装: 管件
产品目录页面: 1605 (CN2011-ZH PDF)
HUF75545P3, HUF75545S3S
SPICE Thermal Model
REV 21 May 1999
HUF75545T
CTHERM1 th 6 6.4e-3
CTHERM2 6 5 3.0e-2
CTHERM3 5 4 1.4e-2
CTHERM4 4 3 1.6e-2
CTHERM5 3 2 5.5e-2
CTHERM6 2 tl 1.5
RTHERM1 th 6 3.2e-3
RTHERM2 6 5 8.1e-3
RTHERM3 5 4 2.3e-2
RTHERM4 4 3 1.3e-1
RTHERM5 3 2 1.8e-1
RTHERM6 2 tl 3.8e-2
SABER Thermal Model
SABER thermal model HUF75545T
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 = 6.4e-3
ctherm.ctherm2 6 5 = 3.0e-2
ctherm.ctherm3 5 4 = 1.4e-2
ctherm.ctherm4 4 3 = 1.6e-2
ctherm.ctherm5 3 2 = 5.5e-2
ctherm.ctherm6 2 tl = 1.5
rtherm.rtherm1 th 6 = 3.2e-3
rtherm.rtherm2 6 5 = 8.1e-3
rtherm.rtherm3 5 4 = 2.3e-2
rtherm.rtherm4 4 3 = 1.3e-1
rtherm.rtherm5 3 2 = 1.8e-1
rtherm.rtherm6 2 tl = 3.8e-2
}
RTHERM1
RTHERM2
RTHERM3
RTHERM4
RTHERM5
RTHERM6
th
6
5
4
3
2
JUNCTION
CTHERM1
CTHERM2
CTHERM3
CTHERM4
CTHERM5
CTHERM6
?2002 Fairchild Semiconductor Corporation
tl
CASE
HUF75545P3 / HUF75545S3S Rev. C 1
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