参数资料
型号: FSB50550UTD
厂商: Fairchild Semiconductor
文件页数: 8/10页
文件大小: 0K
描述: MOD SPM 500V 2A SPM23-ED
标准包装: 15
系列: SPM™
类型: FET
配置: 3 相桥
电流: 2A
电压: 500V
电压 - 隔离: 1500Vrms
封装/外壳: SPM23ED
C 1
(1 ) COM
(2 ) V B(U)
(17 ) P
R 5
C 4
C 2
(3 ) V CC(U)
(4 ) IN (UH)
(5 ) IN (UL)
(6 ) N.C
(7 ) V B(V)
(8 ) V CC(V)
(9 ) IN (VH)
(10 ) IN (VL)
VCC
HIN
LIN
COM
VCC
HIN
LIN
VB
HO
VS
LO
VB
HO
VS
(18 ) U , V S(U)
(19 ) N U
(20 ) N V
(21 ) V , V S(V)
M
C 3
V DC
(11 ) N.C
(12 ) V B(W)
COM
LO
(13 ) V CC(W)
(14 ) IN (WH)
(15 ) IN (WL)
(16 ) N.C
VCC
HIN
LIN
COM
VB
HO
VS
LO
(22 ) N W
(23 ) W , V S(W)
For current sensing and protection
R 4
15- V
Supply
C 5
R 3
Figure 9. Example of Application Circuit
4th Notes:
1. About pin position, refer to Figure 1.
2. RC-coupling (R 5 and C 5 , R 4 and C 6 ) and C 4 at each input of Motion SPM ? 5 product and MCU are useful to prevent improper input signal caused by surge-noise.
3. The voltage-drop across R 3 affects the low-side switching performance and the bootstrap characteristics since it is placed between COM and the source terminal of the low-
side MOSFET. For this reason, the voltage-drop across R 3 should be less than 1 V in the steady-state.
4. Ground-wires and output terminals, should be thick and short in order to avoid surge-voltage and malfunction of HVIC.
5. All the filter capacitors should be connected close to Motion SPM 5 product, and they should have good characteristics for rejecting high-frequency ripple current.
?2010 Fairchild Semiconductor Corporation
FSB50550UTD Rev. C4
8
www.fairchildsemi.com
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