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| 型号： | CM150TL-24NF |
| 厂商： | Powerex Inc |
| 文件页数： | 2/4页 |
| 文件大小： | 0K |
| 描述： | IGBT MOD 6PAC 1200V 150A NF SER |
| 标准包装： | 1 |
| 系列： | IGBTMOD™ |
| 配置： | 三相反相器 |
| 电压 - 集电极发射极击穿（最大）： | 1200V |
| Vge, Ic时的最大Vce（开）： | 3V @ 15V，150A |
| 电流 - 集电极 (Ic)（最大）： | 150A |
| 电流 - 集电极截止（最大）： | 1mA |
| Vce 时的输入电容 (Cies)： | 23nF @ 10V |
| 功率 - 最大： | 890W |
| 输入： | 标准 |
| NTC 热敏电阻： | 无 |
| 安装类型： | 底座安装 |
| 封装/外壳： | 模块 |
| 供应商设备封装： | 模块 |
| 配用： | BG2B-5015-ND - KIT DEV BOARD 2CN 5A FOR IGBT BG2B-3015-ND - KIT DEV BOARD 2CN 3A FOR IGBT BG2B-1515-ND - KIT DEV BOARD 1.5A FOR IGBT BG2A-NF-ND - KIT DEV BOARD FOR IGBT |
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM150TL-24NF
Six IGBTMOD? NF-Series Module
150 Amperes/1200 Volts
Absolute Maximum Ratings, T j = 25°C unless otherwise specified
Collector Current (DC, T C = 76°C)*
Characteristics
Power Device Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E Short)
Gate-Emitter Voltage (C-E Short)
4
Peak Collector Current (Pulse, Repetitive)* 2
Emitter Current (DC, T C = 25°C)* 4
Peak Emitter Current (Pulse, Repetitive)* 2
Maximum Collector Dissipation (T C = 25°C)* 2, * 4
Mounting Torque, M5 Mounting Screws
Mounting Torque, M5 Main Terminal Screws
Module Weight (Typical)
Isolation Voltage, AC 1 minute, 60Hz Sinusoidal
Symbol
T j
T stg
V CES
V GES
I C
I CM
I E * 1
I EM * 1
P C
—
—
—
V ISO
CM150TL-24NF
-40 to 150
-40 to 125
1200
±20
150
300
150
300
890
31
31
750
2500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
Grams
Volts
Electrical and Mechanical Characteristics, T j = 25°C unless otherwise specified
Characteristics
Collector Cutoff Current
Gate-Emitter Threshold Voltage
Gate Leakage Current
Collector-Emitter Saturation Voltage
Forward Transfer Admittance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Symbol
I CES
V GE(th)
I GES
V CE(sat)
|y fs |
C ies
C oes
C res
Q G
Test Conditions
V CE = V CES , V GE = 0V
I C = 15mA, V CE = 10V
±V GE = V GES , V CE = 0V
I C = 150A, V GE = 15V, T j = 25°C* 3
I C = 150A, V GE = 15V, T j = 125°C* 3
I C = 150A, V CE = 10V* 3
V CE = 10V, V GE = 0V
V CC = 600V, I C = 150A, V GE = 15V
Min.
—
6
—
—
—
45
—
—
—
—
Typ.
—
7
—
2.1
2.4
—
—
—
—
675
Max.
1.0
8
0.5
3.0
—
—
23.0
2.0
0.45
—
Units
mA
Volts
μA
Volts
Volts
sec
nf
nf
nf
nC
Inductive
Turn-on Delay Time
t d(on)
—
—
130
ns
Load
Switch
Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
t r
t d(off)
t f
V CC = 600V, I C = 150A,
V GE1 = V GE2 = 15V,
R G = 2.1 Ω , I E = 150A,
—
—
—
—
—
—
70
400
350
ns
ns
ns
Reverse Recovery Time* 1
Reverse Recovery Charge* 1
Emitter-Collector Voltage* 1
t rr
Qrr
V EC
Inductive Load Switching Operation
I E = 150A, V GE = 0V
—
—
—
—
5.8
—
150
—
3.8
ns
μC
Volts
2
*1
*2
*3
*4
I E , I EM , V EC , t rr , and Q rr represent characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Pulse width and repetition rate should be such that device junction temperature (T j ) does not exceed T j(max) rating.
Pulse width and repetition rate should be such as to cause negligible temperature rise.
T C measured point is just under the chips.
01/10 Rev. 1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| CM150TL-24NF_09 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE |
| CM150TL-24NF_12 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE |
| CM150TU-12F | 功能描述:IGBT MOD 6PAC 600V 150A F SER RoHS:是 类别:半导体模块 >> IGBT 系列:IGBTMOD™ 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| CM150TU-12F_09 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:IGBT MODULES HIGH POWER SWITCHING USE |
| CM150TU-12F_12 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE |
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