参数资料
| 型号： | C650-260-WH |
| 厂商： | Bourns Inc. |
| 文件页数： | 6/6页 |
| 文件大小： | 0K |
| 描述： | SURGE SUPP TBU 260MA 650VIMP SMD |
| 产品目录绘图： | C650,C850 Series Top C650,C850 Series Side |
| 标准包装： | 1 |
| 系列： | TBU™ |
| 电压 - 工作： | 300V |
| 技术： | 混合技术 |
| 电路数： | 1 |
| 应用： | 通用 |
| 封装/外壳： | 0.325" L x 0.157 " W x 0.033" H（8.25mm x 4mm x 0.85mm） |
| 供应商设备封装： | 3-DFN |
| 包装： | 标准包装 |
| 产品目录页面： | 2378 (CN2011-ZH PDF) |
| 其它名称： | C650-260-WHDKR |
C650 and C850 Series TBU ? High-Speed Protectors
Reference Application
The C-series devices are general protectors that can be used in a variety of applications. The basic operation of the device will be
demonstrated using the single line application shown in the ?gure below. The test circuit was subjected to a 1000 V, 10/700 μs surge
waveform. The devices used were the TBU-C850-100-WH and a 2031-42T-SM-RPLF GDT (OVP) with a 10 ohm resistor for the load
impedance.
Line
OVP
TBU ? Device
ZLOAD
General Application Circuit
The graph below shows the waveforms for the voltage across the overvoltage protector (GDT) and the current through the TBU ?
device. As the input line voltage increases, the current through the TBU ? device increases rapidly until the trip current is reached. Due
to ?nite reaction time for fast transients, the peak level may exceed the low frequency data sheet maximum for a very short period,
typically ~100 ns. After this initial overshoot, the TBU ? device will transition to the protected state, setting the current to the nominal
current limiting level (~150 mA for this example). The TBU ? device will then reduce the current down it to its very low quiescent level
of 1 mA, typically. As the input line voltage increases to about 500 V, the GDT is triggered, reducing the input line voltage to a very low
level which prevents the TBU ? device from being subjected to a voltage level which exceeds its maximum rating (850 V in this
example). The TBU ? High-Speed Orotector and the GDT will remain in these states until the surge ends, which is about 700 μs later
in this example. Only the ?rst 4 μs of the surge are shown in the graph. For surges or AC voltages below the GDT breakover voltage,
the GDT will not activate, and the TBU ? device will stay in the protecting mode, blocking high voltages from the protected equipment.
900
800
700
1000
800
600
600
500
400
300
200
100
0
100
TBU ? Device Current
GDT Voltage
400
200
0
-200
-400
-600
-800
-1000
0
0.5
1
1.5
2
2.5
3
3.5
4
Time (μs)
TBU-C850-100-WH Response to a 1000 V, 10/700 μs Surge
REV. 06/12
“TBU” is a registered trademark of Bourns, Inc. in the United States and other countries.
Speci?cations are subject to change without notice.
Customers should verify actual device performance in their speci?c applications.
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