参数资料
型号: BSO130N03MS G
厂商: Infineon Technologies
文件页数: 2/5页
文件大小: 0K
描述: MOSFET N-CH 30V 9A DSO-8
产品目录绘图: Mosfets DSO-8
标准包装: 1
系列: OptiMOS™
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 9A
开态Rds(最大)@ Id, Vgs @ 25° C: 13 毫欧 @ 11.1A,10V
Id 时的 Vgs(th)(最大): 2V @ 250µA
闸电荷(Qg) @ Vgs: 17nC @ 10V
输入电容 (Ciss) @ Vds: 1300pF @ 15V
功率 - 最大: 1.56W
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: PG-DSO-8
包装: 标准包装
其它名称: BSO130N03MS GDKR
2
SY10H607
SY100H607
Micrel, Inc.
M9999-032906
hbwhelp@micrel.com or (408) 955-1690
PACKAGE/ORDERING INFORMATION
Ordering Information(1)
Package
Operating
Package
Lead
Part Number
Type
Range
Marking
Finish
SY10H607JC
J28-1
Commercial
SY10H607JC
Sn-Pb
SY10H607JCTR(2)
J28-1
Commercial
SY10H607JC
Sn-Pb
SY100H607JC
J28-1
Commercial
SY100H607JC
Sn-Pb
SY100H607JCTR(2)
J28-1
Commercial
SY100H607JC
Sn-Pb
SY10H607JZ(3)
J28-1
Commercial
SY10H607JZ with
Matte-Sn
Pb-Free bar-line indicator
SY10H607JZTR(2, 3)
J28-1
Commercial
SY10H607JZ with
Matte-Sn
Pb-Free bar-line indicator
SY100H607JZ(3)
J28-1
Commercial
SY100H607JZ with
Matte-Sn
Pb-Free bar-line indicator
SY100H607JZTR(2, 3)
J28-1
Commercial
SY100H607JZ with
Matte-Sn
Pb-Free bar-line indicator
Notes:
1. Contact factory for die availability. Dice are guaranteed at T
A = 25°C, DC Electricals only.
2. Tape and Reel.
3. Pb-Free package is recommended for new designs.
28-Pin PLCC (J28-1)
18
17
16
15
14
13
12
56789
10 11
26
27
28
1
2
3
4
TOP VIEW
PLCC
25 24 23 22 21 20 19
Q
4
TGND
Q
5
V
CCT
Q
3
V
CCT
MR
Q2
Q1
Q0
CLK
VBB
TGND
CLK
D
1
D
2
D
0
EGND
D
0
D
1
D
2
D5
D4
VCCE
D3
D4
D5
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相关代理商/技术参数
参数描述
BSO130N03MSGXUMA1 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 30V 9A 8-Pin DSO 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH 30V 9A DSO-8
BSO130P03S 功能描述:MOSFET P-Channel -30V MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
BSO130P03S H 功能描述:MOSFET P-KANAL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
BSO130P03SH 制造商:Infineon Technologies AG 功能描述:
BSO130P03SHXT 制造商:Infineon Technologies AG 功能描述:MOSFET P-CH 30V 9.2A DSO-8