参数资料
型号: ADP195ACBZ-R7
厂商: Analog Devices Inc
文件页数: 3/12页
文件大小: 0K
描述: IC HIGH-SIDE LOAD SWITCH 4WLSCP
产品变化通告: 8mm Carrier Tape Changes 28/Feb/2012
标准包装: 1
类型: 高端开关
输入类型: 非反相
输出数: 1
导通状态电阻: 50 毫欧
电流 - 输出 / 通道: 500mA
电源电压: 1.1 V ~ 3.6 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 4-UFBGA,DSBGA
供应商设备封装: 4-WLCSP
包装: 标准包装
其它名称: ADP195ACBZ-R7DKR

Data Sheet
SPECIFICATIONS
V IN = 1.8 V, V EN = V IN , I OUT = 200 mA, T A = 25°C, unless otherwise noted.
Table 1.
ADP195
Parameter
INPUT VOLTAGE RANGE
Symbol
V IN
Conditions
T J = ?40°C to +85°C
Min
1.1
Typ
Max
3.6
Unit
V
EN INPUT
EN Input Threshold
V IH
1.1 V ≤ V IN < 1.8 V, T J = ?40°C to +85°C
0.29
1.0
V
1.8 V ≤ V IN ≤ 3.6 V, T J = ?40°C to +85°C
0.45
1.2
EN Input Pull-Down Current
V IN Shutdown Current
I EN
V IN = 1.8 V
V EN = 0 V, V IN = 0 V, V OUT = 3.6 V
500
?10
nA
nA
REVERSE BLOCKING
V OUT Current
Hysteresis
V EN = 0 V, V IN = 0 V, V OUT = 3.6 V
|V IN ? V OUT |
4
75
μA
mV
CURRENT
Ground Current
I GND
V OUT = 0, includes V EN pull-down and reverse blocking
10
μA
bias current, V IN = 3.6 V, T J = ?40°C to +85°C
V OUT = 0, includes V EN pull-down and reverse blocking
bias current, V IN = 1.8 V
1
μA
Off State Current
I OFF
V EN = GND (includes reverse blocking bias current), V OUT = 0 V
V EN = GND, T J = ?40°C to +85°C, V OUT = 0 V
0.7
5
μA
μA
V IN to V OUT RESISTANCE
RDS ON
WLCSP
LFCSP
V IN = 3.6 V, I LOAD = 200 mA, V EN = 3.6 V
V IN = 2.5 V, I LOAD = 200 mA, V EN = 2.5 V
V IN = 1.8 V, I LOAD = 200 mA, V EN = 1.8 V
V IN = 1.8 V, I LOAD = 200 mA, V EN = 1.8 V, T J = ?40°C to +85°C
V IN = 1.5 V, I LOAD = 200 mA, V EN = 1.5 V
V IN = 1.2 V, I LOAD = 200 mA, V EN = 1.2 V
V IN = 3.6 V, I LOAD = 200 mA, V EN = 3.6 V
V IN = 2.5 V, I LOAD = 200 mA, V EN = 2.5 V
V IN = 1.8 V, I LOAD = 200 mA, V EN = 1.8 V
V IN = 1.8 V, I LOAD = 200 mA, V EN = 1.8 V, T J = ?40°C to +85°C
V IN = 1.5 V, I LOAD = 200 mA, V EN = 1.5 V
V IN = 1.2 V, I LOAD = 200 mA, V EN = 1.2 V
0.050
0.055
0.065
0.075
0.100
0.070
0.078
0.090
0.097
0.125
0.095
0.130
Ω
Ω
Ω
Ω
Ω
Ω
Ω
Ω
Ω
Ω
Ω
Ω
V OUT TURN-ON DELAY TIME
Turn-On Delay Time
t ON_DLY
V IN = 1.8 V, I LOAD = 200 mA, V EN = 1.8 V, C LOAD = 1 μF
V IN = 3.6 V, I LOAD = 200 mA, V EN = 3.6 V, C LOAD = 1 μF
5
1.5
μs
μs
TIMING DIAGRAM
V EN
TURN-ON
DELAY
90%
10%
TURN-ON
RISE
TURN-OFF
DELAY
V OUT
TURN-OFF
FALL
Figure 2. Timing Diagram
Rev. C | Page 3 of 12
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