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参数资料
| 型号： | 99227 |
| 厂商： | IXYS Corporation |
| 英文描述： | PolarHV Power MOSFET |
| 中文描述： | PolarHV功率MOSFET |
| 文件页数： | 2/5页 |
| 文件大小： | 571K |
| 代理商： | 99227 |
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, unless otherwise specified)
Min.
Typ.
Max.
g
fs
V
DS= 10 V; ID = T , pulse test
20
28
S
C
iss
3600
pF
C
oss
V
GS = 0 V, VDS = 25 V, f = 1 MHz
380
pF
C
rss
48
pF
t
d(on)
20
ns
t
r
V
GS = 10 V, VDS = 0.5 VDSS, ID = IT
25
ns
t
d(off)
R
G = 4 (External)
58
ns
t
f
20
ns
Q
g(on)
96
nC
Q
gs
V
GS= 10 V, VDS = 0.5 VDSS, ID = IT
20
nC
Q
gd
45
nC
R
thJC
1.25 K/W
R
thCK
0.21
K/W
Source-Drain Diode
Characteristic Values
(T
J = 25°C, unless otherwise specified)
Symbol
Test Conditions
Min.
typ.
Max.
I
S
V
GS = 0 V
26
A
I
SM
Repetitive
78
A
V
SD
I
F = IS, VGS = 0 V,
1.5
V
Pulse test, t
≤ 300 s, duty cycle d ≤ 2 %
t
rr
I
F = 25 A
400
ns
-di/dt = 100 A/
s
Q
RM
V
R = 100 V
5.0
C
Note: Test Current I
T = 13A
IXYS MOSFETs and IGBTs are covered by
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
4,850,072
5,017,508
5,063,307
5,381,025
6,259,123B1
6,534,343
6,710,405B2
6,759,692
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
ISOPLUS220 Outline
IXTC 26N50P
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