参数资料
| 型号： | 4N33 |
| 厂商： | Vishay Semiconductors |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | OPTOCOUPLER PHOTODARL 500% 6DIP |
| 标准包装： | 2,000 |
| 通道数： | 1 |
| 输入类型： | DC |
| 电压 - 隔离： | 5300Vrms |
| 电流传输比（最小值）： | 500% @ 10mA |
| 输出电压： | 30V |
| 电流 - 输出 / 通道： | 100mA |
| 电流 - DC 正向(If)： | 60mA |
| Vce饱和（最大）： | 1V |
| 输出类型： | 有基极的达林顿晶体管 |
| 安装类型： | 通孔 |
| 封装/外壳： | 6-DIP（0.300"，7.62mm） |
| 包装： | 管件 |
| 其它名称： | 4N33GI 4N33GI-ND 4N33VS |
4N32, 4N33
Vishay Semiconductors
Optocoupler, Photodarlington
Output, High Gain, with Base
Connection
ABSOLUTE MAXIMUM RATINGS (T amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
Forward current
Power dissipation
Derate linearly
from 55 °C
V R
I F
P diss
3
60
100
1.33
V
mA
mW
mW/°C
OUTPUT
Collector emitter breakdown voltage
Emitter base breakdown voltage
Collector base breakdown voltage
Emitter collector breakdown voltage
Collector (load) current
Power dissipation
Derate linearly
BV CEO
BV EBO
BV CBO
BV ECO
I C
P diss
30
8
50
5
100
150
2
V
V
V
V
mA
mW
mW/°C
COUPLER
Total dissipation
Derate linearly
P tot
250
3.3
mW
mW/°C
Isolation test voltage (between emitter
Leakage path
Air path
Isolation resistance
Storage temperature
Operating temperature
1s
V IO = 500 V, T amb = 25 °C
V IO = 500 V, T amb = 100 °C
V ISO
R IO
R IO
T stg
T amb
5300
7
7
?? 10 12
? 10 11
- 55 to + 150
- 55 to + 100
V RMS
mm min.
mm min.
?
?
°C
°C
Lead soldering time (1)
at 260 °C 10 s
Notes
? Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
ELECTRICAL CHARACTERISTICS (T amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
Reverse current
Capacitance
I F = 50 mA
V R = 3 V
V R = 0 V
V F
I R
C O
1.25
0.1
25
1.5
100
V
μA
pF
OUTPUT
Collector emitter breakdown voltage (1)
Collector base breakdown voltage (1)
Emitter base breakdown voltage (1)
I C = 100 μA, I F = 0
I C = 100 μA, I F = 0
I C = 100 μA, I F = 0
BV CEO
BV CBO
BV EBO
30
50
8
V
V
V
Emitter collector breakdown voltage (1)
I C = 100 μA, I F = 0
BV ECO
5
10
V
Collector emitter leakage current
V CE = 10 V, I F = 0
I CEO
1
100
nA
COUPLER
I C = 0.5 mA, V CE = 5 V
h FE
13
Collector emitter saturation voltage
V CEsat
1
V
Coupling capacitance
1.5 pF
Notes
? Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
(1) Indicates JEDEC registered values.
www.vishay.com
2
For technical questions, contact: optocoupleranswers@vishay.com
Document Number: 81865
Rev. 1.2, 15-Feb-11
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 4N33(SHORT) | 制造商:Toshiba America Electronic Components 功能描述:Optocoupler DC-IN 1-CH Darlington With Base DC-OUT 6-Pin PDIP 制造商:Toshiba America Electronic Components 功能描述:PHOTOCOUPLER DARL TRANS-OUT 6DIP |
| 4N33(SHORT,F) | 功能描述:晶体管输出光电耦合器 TR JEDIC EQUIL RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
| 4N33 | 制造商:Vishay Semiconductors 功能描述:Optocoupler |
| 4N33.300 | 制造商:Fairchild Semiconductor Corporation 功能描述:OPTOCOUPLER DARLINGTON O/P |
| 4N33.300 | 制造商:Fairchild Semiconductor Corporation 功能描述:OPTOCOUPLER DARLINGTON O/P |
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