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| 型号： | 4N32-X007 |
| 厂商： | Vishay Intertechnology,Inc. |
| 英文描述： | Optocoupler with Photodarlington Output |
| 中文描述： | 与Photodarlington光耦输出 |
| 文件页数： | 1/7页 |
| 文件大小： | 128K |
| 代理商： | 4N32-X007 |
4N32/ 4N33
Document Number 83736
Rev. 1.4, 26-Jan-05
Vishay Semiconductors
www.vishay.com
1
i179005
1
2
3
6
5
4
B
C
E
A
C
NC
Pb
Pb-free
e3
Optocoupler, Photodarlington Output, High Gain, With Base
Connection
Features
Very high current transfer ratio, 500 % Min.
High isolation resistance, 1011
Typical
Standard plastic DIP package
Lead-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Agency Approvals
UL1577, File No. E52744 System Code H or J,
Double Protection
DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
BSI IEC60950 IEC60065
Description
The 4N32 and 4N33 are optically coupled isolators
with a gallium arsenide infrared LED and a solicon
photodarlington sensor.
Switching can be achieved while maintaining a high
degree of isolation between driving and load circuits.
These optocouplers can be used to replace reed and
mercury relays with advantages of long life, high
speed switching and elimination of magnetic fields.
Order Information
For additional information on the available options refer to
Option Information.
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Part
Remarks
4N32
CTR > 500 %, DIP-6
4N33
CTR > 500 %, DIP-6
4N32-X007
CTR > 500 %, SMD-6 (option 7)
4N32-X009
CTR > 500 %, SMD-6 (option 9)
4N33-X007
CTR > 500 %, SMD-6 (option 7)
4N33-X009
CTR > 500 %, SMD-6 (option 9)
Parameter
Test condition
Symbol
Value
Unit
Peak reverse voltage
VR
3.0
V
Forward continuous current
IF
60
mA
Power dissipation
Pdiss
100
mW
Derate linearly
from 55 °C
1.33
mW/°C
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| 4N32-X009 | Optocoupler with Photodarlington Output |
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| 4N32X2 | LOW INPUT CURRENT PHOTODARLINGTON OPTICALLY COUPLED ISOLATORS |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 4N32-X007T | 功能描述:晶体管输出光电耦合器 Phototransistor Out Single CTR>500% RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
| 4N32-X009 | 功能描述:晶体管输出光电耦合器 Phototransistor Out Single CTR>500% RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
| 4N32-X009T | 功能描述:晶体管输出光电耦合器 Phototransistor Out Single CTR>500% RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
| 4N32-X017T | 功能描述:晶体管输出光电耦合器 Phototransistor Out Single CTR>500% RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
| 4N32X1 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:LOW INPUT CURRENT PHOTODARLINGTON OPTICALLY COUPLED ISOLATORS |
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