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参数资料
| 型号： | 4AM14 |
| 厂商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel/P-Channel Complementary Power MOS FET Array(N沟道/P沟道功率MOSFET阵列) |
| 中文描述： | 硅N-Channel/P-Channel互补功率场效应晶体管阵列（不适用沟道/页沟道功率MOSFET的阵列） |
| 文件页数： | 4/5页 |
| 文件大小： | 40K |
| 代理商： | 4AM14 |
4AM14
4
6
4
2
50
100
150
Ambient Temperature Ta (°C)
Maximum Channel Dissipation Curve
Channel
Dissipation
Pch
(W)
0
Condition : Channel Dissipation
of each die is identical
4 Device Operation
3 Device Operation
2 Device Operation
1 Device Operation
48
32
16
50
100
150
Case Temperature Tc (°C)
Maximum Channel Dissipation Curve
Channel
Dissipation
Pch
(W)
0
Condition : Channel Dissipation
of each die is identical
4 Device Operation
3 Device Operation
2 Device Operation
1 Device Operation
50
30
10
3
1
0.3
0.1
0.05
0.1
0.3
1
3
10
30
100
Drain to Source Voltage V
(V)
DS
Drain
Current
I
(A)
D
1 ms
PW
=
10
ms
(1
shot)
DC
Operation
(Tc
=
25°C)
Ta = 25°C
Operation in this area
is limited by R
(on)
DS
10
s
100
s
Maximum Safe Operation Area
(N-Channel)
– 50
– 30
– 10
– 3
– 1
– 0.3
– 0.1
– 0.05
– 0.1
– 0.3
– 1
– 3
– 10
– 30
– 100
Drain to Source Voltage V
(V)
DS
Drain
Current
I
(A)
D
1 ms
PW
=
10
ms
(1
shot)
DC
Operation
(Tc
=
25°C)
Ta = 25°C
Operation in this area
is limited by R
(on)
DS
10 s
100
s
Maximum Safe Operation Area
(P-Channel)
相关PDF资料 |
PDF描述 |
|---|---|
| 4AM15 | Silicon N-Channel/P-Channel Power MOS FET Array(N沟道/P沟道功率MOSFET阵列) |
| 4AM16 | Silicon N-Channel/P-Channel Power MOS FET Array(N沟道/P沟道功率MOSFET阵列) |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 4AM15 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N-Channel/P-Channel Power MOS FET Array |
| 4AM16 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N-Channel/P-Channel Power MOSFET Array |
| 4AM17 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon N/P Channel MOS FET High Speed Power Switching |
| 4AM2342-4TN00-0EA0 | 制造商:Siemens 功能描述:Bulk |
| 4AM2642-4TN00-0EA0 | 制造商:Siemens 功能描述: |
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