参数资料
型号: 4AK25
厂商: Hitachi,Ltd.
英文描述: Silicon N-Channel Power MOS FET Array
中文描述: 硅N沟道功率MOS场效应管阵列
文件页数: 2/6页
文件大小: 39K
代理商: 4AK25
4AK25
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
60
V
Gate to source voltage
V
GSS
±20
V
Drain current
I
D
1.5
A
Drain peak current
I
D(pulse)*
1
4.5
A
Body to drain diode reverse drain current
I
DR
1.5
A
Channel dissipation
Pch (Tc = 25
°C)*2 24
W
Channel dissipation
Pch*
2
3.6
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 s, duty cycle ≤ 1%
2. 4 Devices operation
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