参数资料
型号: 32CTQ025
厂商: Vishay Semiconductors
文件页数: 2/7页
文件大小: 156K
描述: DIODE SCHOTTKY 25V 15A TO-220AB
标准包装: 1,000
电压 - 在 If 时为正向 (Vf)(最大): 490mV @ 15A
电流 - 在 Vr 时反向漏电: 1.75mA @ 25V
电流 - 平均整流 (Io)(每个二极管): 15A
电压 - (Vr)(最大): 25V
二极管类型: 肖特基
速度: 快速恢复 =< 500 ns,> 200mA(Io)
二极管配置: 1 对共阴极
安装类型: 通孔
封装/外壳: TO-220-3
供应商设备封装: TO-220AB
包装: 管件
其它名称: *32CTQ025
VS-32CTQ025PbF, VS-32CTQ025-N3, VS-32CTQ030PbF, VS-32CTQ030-N3
www.vishay.com
Vishay Semiconductors
Revision: 11-Oct-11
2
Document Number: 94202
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop
See fig. 1
VFM
(1)
15 A
TJ
= 25 °C
30 A 0.58
0.49
V
15 A
TJ
= 125 °C
30 A 0.53
0.40
Maximum reverse leakage current
See fig. 2
IRM (1)
TJ
= 25 °C
VR
= Rated V
R
1.75
mA
TJ
= 125 °C
97
Threshold voltage
VF(TO)
TJ
= T
J
maximum
0.233 V
Forward slope resistance
rt
9.09
m?
Maximum junction capacitance per leg
CT
VR
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C
1300 pF
Typical series inductance per leg
LS
Measured lead to lead 5 mm from package body 8.0 nH
Maximum voltage rate of change dV/dt
Rated VR
10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
TJ, TStg
- 55 to 150 °C
Maximum thermal resistance,
junction to case per leg
RthJC
DC operation
See fig. 4
3.25
°C/W
Typical thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth and greased 0.50
Approximate weight
2g
0.07 oz.
Mounting torque
minimum
6 (5)
kgf · cm
(lbf · in)
maximum
12 (10)
Marking device Case style TO-220AB
32CTQ025
32CTQ030
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