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参数资料
| 型号： | 2SK3481-AZ |
| 厂商： | Renesas Electronics America |
| 文件页数： | 3/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V MP-25/TO-220 |
| 标准包装： | 200 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 30A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 50 毫欧 @ 15A，10V |
| 闸电荷(Qg) @ Vgs： | 48nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2300pF @ 10V |
| 功率 - 最大： | 1.5W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 散装 |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3481
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
ORDERING INFORMATION
The 2SK3481 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
? Super low on-state resistance:
R DS(on)1 = 50 m ? MAX. (V GS = 10 V, I D = 15 A)
PART NUMBER
2SK3481
2SK3481-S
2SK3481-ZJ
2SK3481-Z
PACKAGE
TO-220AB
TO-262
TO-263
TO-220SMD Note
R DS(on)2 = 58 m ? MAX. (V GS = 4.5 V, I D = 15 A)
? Low C iss : C iss = 2300 pF TYP.
? Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (T A = 25°C)
Note TO-220SMD package is produced only
in Japan.
(TO-220AB)
Drain to Source Voltage (V GS = 0 V)
V DSS
100
V
Gate to Source Voltage
(V DS
= 0 V)
V GSS
± 20
V
Drain Current (DC) (T C = 25°C)
I D(DC)
± 30
A
Drain Current (pulse)
Note1
I D(pulse)
± 60
A
Total Power Dissipation (T C = 25°C)
P T1
56
W
(TO-262)
Total Power Dissipation
Channel Temperature
Storage Temperature
(T A
= 25°C)
P T2
T ch
T stg
1.5
150
–55 to +150
W
°C
°C
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
I AS
E AS
26
68
A
mJ
Notes 1. PW ≤ 10 μ s, Duty cycle ≤ 1%
2. Starting T ch = 25°C, V DD = 50 V, R G = 25 ?, V GS = 20 → 0 V
THERMAL RESISTANCE
(TO-263, TO-220SMD)
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
R th(ch-C)
R th(ch-A)
2.23
83.3
° C/W
° C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15063EJ1V0DS00 (1st edition)
Date Published January 2002 NS CP(K)
Printed in Japan
?
2002
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK3482-AZ | MOSFET N-CH 100V MP-3/TO-251 |
| 2SK3483-AZ | MOSFET N-CH 100V MP-3/TO-251 |
| 2SK3484-AZ | MOSFET N-CH 100V MP-3/TO-251 |
| 2SK3511-AZ | MOSFET N-CH 75V MP-25/TO-220 |
| 2SK3541T2L | MOSFET N-CH 30V .1A VMT3 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3481-S | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
| 2SK3481-S12-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3481-Z | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
| 2SK3481-Z-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 100V 30A 3-Pin(2+Tab) TO-220 SMD |
| 2SK3481-ZJ | 制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
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