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参数资料
| 型号： | 2SK3234 |
| 元件分类： | JFETs |
| 英文描述： | 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220CFM, 3 PIN |
| 文件页数： | 8/12页 |
| 文件大小： | 64K |
| 代理商： | 2SK3234 |
2SK3234
3
Electrical Characteristics (Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
500
—
V
I
D = 10 mA, VGS = 0
Gate to source leak current
I
GSS
——
±0.1
AV
GS = ±30 V, VDS = 0
Zero gate voltage drain current
I
DSS
——
1
AV
DS = 500 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
3.0
—
4.0
V
DS = 10 V, ID = 1 mA
Static drain to source on state
resistance
R
DS(on)
—
0.65
0.85
I
D = 4 A, VGS = 10 V
Note4
Forward transfer admittance
|y
fs|
4.0
7.0
—
S
I
D = 4 A, VDS = 10 V
Note4
Input capacitance
Ciss
—
970
—
pF
V
DS = 25 V
Output capacitance
Coss
—
110
—
pF
V
GS = 0
Reverse transfer capacitance
Crss
—
18
—
pF
f = 1 MHz
Turn-on delay time
td(on)
—
25
—
ns
I
D = 4 A
Rise time
tr
—
21
—
ns
V
GS = 10 V
Turn-off delay time
td(off)
—
80
—
ns
R
L = 62.5
Fall time
tf
—
25
—
ns
Rg = 10
Total gate charge
Qg
—
25
—
nC
V
DD = 400 V
Gate to source charge
Qgs
—
4
—
nC
V
GS = 10 V
Gate to drain charge
Qgd
—
11
—
nC
I
D = 8 A
Body-drain diode forward
voltage
V
DF
—
0.9
1.35
V
I
F = 8 A, VGS = 0
Body-drain diode reverse
recovery time
trr
—
360
—
ns
I
F = 8 A, VGS = 0
Body-drain diode reverse
recovery charge
Qrr
—
1.7
—
C
diF/dt = 100 A/
s
Note:
4. Pulse test
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK3234(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3235 | 制造商:未知厂家 制造商全称:未知厂家 功能描述: |
| 2SK3235-E | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 500V 15A 3-Pin(3+Tab) TO-3P 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 500V 15A 3-Pin(3+Tab) TO-3P Cut Tape |
| 2SK3236 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Switching Regulator Applications, DC-DC Converter and Motor Drive Applications |
| 2SK3236(F) | 制造商:Toshiba America Electronic Components 功能描述: 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 60V 35A 3-Pin(3+Tab) TO-220NIS |
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