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参数资料
| 型号： | 2SK2729 |
| 元件分类： | JFETs |
| 英文描述： | 20 A, 500 V, 0.29 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | TO-3P, 3 PIN |
| 文件页数： | 12/12页 |
| 文件大小： | 66K |
| 代理商： | 2SK2729 |
2SK2729
7
25
20
15
10
5
25
50
75
100
125
150
0
3
1
0.3
0.1
0.03
0.01
10
100
1 m
10 m
100 m
1
10
DM
P
PW
T
D =
PW
T
ch – c(t) = s (t)
ch – c
ch – c = 0.83
°C/W, Tc = 25 °C
θ
γ
θ
Tc = 25
°C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot
pulse
0
0.4
0.8
1.2
1.6
2.0
50
40
30
20
10
Source to Drain Voltage
V
(V)
SD
Reverse
Drain
Current
I
(A)
DR
Reverse Drain Current vs.
Source to Drain Voltage
Channel Temperature Tch (
°C)
Repetive
Avalanche
Energy
E
(mJ)
AR
Maximun Avalanche Energy vs.
Channel Temperature Derating
Pulse Width
PW (S)
Normalized
Transient
Thermal
Impedance
s
(t)
γ
Normalized Transient Thermal Impedance vs. Pulse Width
I
= 20 A
V
= 50 V
duty < 0.1 %
Rg > 50
AP
DD
V
= 0 V
GS
5, 10 V
Pulse Test
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2729(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2730-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 500V 25A 3-Pin(3+Tab) TO-3P Box 制造商:Renesas 功能描述:Trans MOSFET N-CH 500V 25A 3-Pin(3+Tab) TO-3P Box |
| 2SK2731T146 | 功能描述:MOSFET N-CH 30V 200MA RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SK2733(F) | 制造商:Toshiba America Electronic Components 功能描述: 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 900V 1A 3-Pin(3+Tab) TO-220 |
| 2SK2735L(E) | 制造商:Renesas Electronics Corporation 功能描述: |
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