- 您现在的位置：买卖IC网 > PDF目录67311 > 2SK2529 50 A, 60 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB PDF资料下载
参数资料
| 型号： | 2SK2529 |
| 元件分类： | JFETs |
| 英文描述： | 50 A, 60 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220CFM, 3 PIN |
| 文件页数： | 7/13页 |
| 文件大小： | 70K |
| 代理商： | 2SK2529 |
2SK2529
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
60
—
V
I
D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
—
V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
—
±10
A
V
GS = ±16 V, VDS = 0
Zero gate voltage drain current I
DSS
—
10
A
V
DS = 60 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
1.0
—
2.0
V
I
D = 1 mA, VDS = 10 V
Static drain to source on state
resistance
R
DS(on)
—
7
10
m
I
D = 25 A
V
GS = 10 V*
1
—
10
16
m
I
D = 25 A
V
GS = 4 V*
1
Forward transfer admittance
|y
fs|
35
55
—
S
I
D = 25 A
V
DS = 10 V*
1
Input capacitance
Ciss
—
3550
—
pF
V
DS = 10 V
Output capacitance
Coss
—
1760
—
pF
V
GS = 0
Reverse transfer capacitance
Crss
—
500
—
pF
f = 1 MHz
Turn-on delay time
t
d(on)
—
35
—
ns
I
D = 25 A
Rise time
t
r
—
230
—
ns
V
GS = 10 V
Turn-off delay time
t
d(off)
—
470
—
ns
R
L = 1.2
Fall time
t
f
—
360
—
ns
Body to drain diode forward
voltage
V
DF
—
0.85
—
V
I
F = 50 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
135
—
ns
I
F = 50 A, VGS = 0
di
F / dt = 50 A / s
Note
1. Pulse Test
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK2553STL-E | 50 A, 60 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2664 | 3 A, 900 V, 4.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK2666 | 3 A, 900 V, 4.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK2669 | 5 A, 900 V, 2.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK2729 | 20 A, 500 V, 0.29 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK2529-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK2530 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SK2530-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:Cut Tape 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFETN CH250V2ATO-251 |
| 2SK2531 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| 2SK2532 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 10A I(D) |
发布紧急采购，3分钟左右您将得到回复。