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参数资料
| 型号： | 2SK1947 |
| 元件分类： | JFETs |
| 英文描述： | 50 A, 250 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | TO-3PL, 3 PIN |
| 文件页数： | 10/12页 |
| 文件大小： | 65K |
| 代理商： | 2SK1947 |
2SK1947
5
Pulse Test
0
4
812
16
20
Gate to Source Voltage V
(V)
GS
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain
to
Source
Saturation
Voltage
V
(on)
(V)
DS
5
4
3
2
1
I = 10 A
D
20 A
50 A
Static Drain to Source on State
Resistance vs. Drain Current
Static
Drain
to
Source
on
State
Resistance
R
(on)
(
)
DS
Drain Current I
(A)
D
V
= 10 V
GS
5
10
20
50
100 200
0.2
0.1
0.05
0.02
0.01
0.005
0.5
2
Pulse Test
Static Drain to Source on State
Resistance vs. Temperature
Static
Drain
to
Source
on
State
Resistance
R
(on)
(
)
DS
0.20
0.16
0.12
0.08
0.04
0
I = 50 A
D
–40
0
80
120
Case Temperature Tc (°C)
40
Pulse Test
V
= 10 V
160
GS
10 A, 20 A
Forward Transfer Admittance
vs. Drain Current
Forward
Transfer
Admittance
|yfs
|
(S)
Drain Current I
(A)
D
Tc = 25°C
75°C
100
50
20
10
5
2
1
–25°C
Pulse Test
V
= 10 V
DS
0.5
1
2
5
10
20
50
相关PDF资料 |
PDF描述 |
|---|---|
| 2SK2529 | 50 A, 60 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK2553STL-E | 50 A, 60 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2664 | 3 A, 900 V, 4.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK2666 | 3 A, 900 V, 4.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK2669 | 5 A, 900 V, 2.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK1947(E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SK1948 | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 250V 50A 3-Pin(3+Tab) TO-3PL |
| 2SK1949L(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1954 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK1954-Z(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
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