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参数资料
| 型号： | 2SK1341 |
| 元件分类： | JFETs |
| 英文描述： | 6 A, 900 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | TO-3P, 3 PIN |
| 文件页数： | 7/11页 |
| 文件大小： | 63K |
| 代理商： | 2SK1341 |
2SK1341
3
Electrical Characteristics (Ta = 25
°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
900
—
V
I
D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±30
——V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±25 V, VDS = 0
Zero gate voltage drain current I
DSS
—
250
AV
DS = 720 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
2.0
—
3.0
V
I
D = 1 mA, VDS = 10 V
Static drain to source on state
resistance
R
DS(on)
—
2.0
3.0
I
D = 3 A, VGS = 10 V *
1
Forward transfer admittance
|yfs|
2.3
3.7
—
S
I
D = 3 A, VDS = 20 V *
1
Input capacitance
Ciss
—
980
—
pF
V
DS = 10 V, VGS = 0,
Output capacitance
Coss
—
400
—
pF
f = 1 MHz
Reverse transfer capacitance
Crss
—
195
—
pF
Turn-on delay time
t
d(on)
—
20
—
ns
I
D = 3 A, VGS = 10 V,
Rise time
t
r
—
80
—
ns
R
L = 10
Turn-off delay time
t
d(off)
—
125
—
ns
Fall time
t
f
—
100
—
ns
Body to drain diode forward
voltage
V
DF
—
0.9
—
V
I
F = 6 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
1000
—
ns
I
F = 6 A, VGS = 0,
di
F/dt = 100 A/s
Note:
1. Pulse test
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SK1341-E | 制造商:Renesas Electronics Corporation 功能描述:POWERMOSFET - Rail/Tube 制造商:Renesas Electronics Corporation 功能描述:MOSFET N-CH 900V 6A TO-3P |
| 2SK1342 | 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET N-CH 900V 8A 3PIN TO-P - Rail/Tube |
| 2SK1342-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 900V 8A 3-Pin(3+Tab) TO-3P 制造商:Renesas Electronics Corporation 功能描述:POWER MOSFET - Rail/Tube 制造商:Renesas Electronics Corporation 功能描述:MOSFET N-CH 900V 6A TO-3P |
| 2SK1345 | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK1346 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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