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参数资料
| 型号： | 2SC5754-FB |
| 元件分类： | 小信号晶体管 |
| 英文描述： | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | THIN, SUPER MINIMOLD PACKAGE-4 |
| 文件页数： | 18/24页 |
| 文件大小： | 114K |
| 代理商： | 2SC5754-FB |
Data Sheet P15573EJ1V0DS
3
2SC5754
ELECTRICAL CHARACTERISTICS (TA = +25
°°°°C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0 mA
1 000
nA
Emitter Cut-off Current
IEBO
VBE = 1 V, IC = 0 mA
1 000
nA
DC Current Gain
hFE
Note 1
VCE = 3 V, IC = 100 mA
40
60
100
RF Characteristics
Gain Bandwidth Product
fT
VCE = 3 V, IC = 100 mA, f = 0.5 GHz
16
20
GHz
Insertion Power Gain
S21e2 VCE = 3 V, IC = 100 mA, f = 2 GHz
5.0
6.5
dB
Reverse Transfer Capacitance
Cre
Note 2
VCB = 3 V, IE = 0 mA, f = 1 MHz
1.0
1.5
pF
Maximum Available Power Gain
MAG
Note 3
VCE = 3 V, IC = 100 mA, f = 2 GHz
12.0
dB
Linear Gain
GL
VCE = 3.6 V, ICq = 20 mA, f = 1.8 GHz,
Pin = 0 dBm, 1/2 Duty
12.0
dB
Gain 1 dB Compression Output Power
PO (1 dB)
VCE = 3.6 V, ICq = 4 mA, f = 1.8 GHz,
Pin = 15 dBm, 1/2 Duty
26.0
dBm
Collector Efficiency
ηC
VCE = 3.6 V, ICq = 4 mA, f = 1.8 GHz,
Pin = 15 dBm, 1/2 Duty
60
%
Notes 1. Pulse measurement: PW
≤ 350
s, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
3. MAG =
hFE CLASSIFICATION
Rank
FB
Marking
R57
hFE Value
40 to 100
(K –
√√√√ (K2 – 1) )
S21
S12
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC5754-T2-A | 制造商:Renesas Electronics Corporation 功能描述:RF SMALL SIGNAL TRANSISTOR BIPOLAR/HBT |
| 2SC5754-T2-A-FB | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC5755(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR NPN 10V 2A TSM 制造商:Toshiba America Electronic Components 功能描述:Transistor NPN 10V 2A hfe1000 25ns TSM |
| 2SC5761-T2-A | 制造商:Renesas Electronics Corporation 功能描述:RF SMALL SIGNAL TRANSISTOR BIPOLAR/HBT |
| 2SC5761-T2-A-FB | 制造商:Renesas Electronics Corporation 功能描述: |
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