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参数资料
| 型号： | 2SC5509-T2-FB |
| 元件分类： | 小信号晶体管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | THIN, SUPER MINIMOLD, M04, 4 PIN |
| 文件页数： | 6/12页 |
| 文件大小： | 209K |
| 代理商： | 2SC5509-T2-FB |
DATA SHEET
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
NPN SILICON RF TRANSISTOR
2SC5509
NPN SILICON RF TRANSISTOR
FOR MEDIUM OUTPUT POWER, LOW-NOISE, HIGH-GAIN AMPLIFICATION
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)
The mark
shows major revised points.
Document No. PU10009EJ02V0DS (2nd edition)
Date Published September 2004 CP(K)
Printed in Japan
NEC Compound Semiconductor Devices, Ltd. 2001, 2004
FEATURES
Ideal for medium output power amplification
NF = 1.2 dB TYP., Ga = 12 dB TYP. @ VCE = 2 V, IC = 10 mA, f = 2 GHz
Maximum available power gain: MAG = 14 dB TYP. @ VCE = 2 V, IC = 50 mA, f = 2 GHz
fT = 25 GHz technology adopted
Flat-lead 4-pin thin-type super minimold (M04) package
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
2SC5509
50 pcs (Non reel)
8 mm wide embossed taping
2SC5509-T2
3 kpcs/reel
Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25
°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
15
V
Collector to Emitter Voltage
VCEO
3.3
V
Emitter to Base Voltage
VEBO
1.5
V
Collector Current
IC
100
mA
Total Power Dissipation
Ptot
Note
190
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
65 to +150
°C
Note Free Air
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