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参数资料
| 型号： | 2SC5509-FB |
| 元件分类： | 小信号晶体管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | THIN, SUPER MINIMOLD, M04, 4 PIN |
| 文件页数： | 10/12页 |
| 文件大小： | 209K |
| 代理商： | 2SC5509-FB |
Data Sheet PU10009EJ02V0DS
5
2SC5509
Noise Characteristics
6.0
0.0
5.0
4.0
3.0
2.0
1.0
30
25
20
15
10
5
0
1
10
100
Collector Current IC (mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise
Figure
NF
(dB)
Associated
Gain
G
a(dB)
VCE = 2 V
f = 1 GHz
NF
Ga
6.0
0.0
5.0
4.0
3.0
2.0
1.0
30
25
20
15
10
5
0
1
10
100
Collector Current IC (mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise
Figure
NF
(dB)
Associated
Gain
G
a(dB)
VCE = 2 V
f = 1.5 GHz
NF
Ga
6.0
0.0
5.0
4.0
3.0
2.0
1.0
30
25
20
15
10
5
0
1
10
100
Collector Current IC (mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise
Figure
NF
(dB)
Associated
Gain
G
a(dB)
VCE = 2 V
f = 2 GHz
NF
Ga
6.0
0.0
5.0
4.0
3.0
2.0
1.0
30
25
20
15
10
5
0
1
10
100
Collector Current IC (mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise
Figure
NF
(dB)
Associated
Gain
G
a(dB)
VCE = 2 V
f = 2.5 GHz
NF
Ga
Remark The graphs indicate nominal characteristics.
S-PARAMETERS
S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form
(S2P) that enables direct import to a microwave circuit simulator without keyboard input.
Click here to download S-parameters.
[RF and Microwave]
→ [Device Parameters]
URL http://www.ncsd.necel.com/
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC5509-T2-A | 功能描述:RF TRANSISTOR NPN SOT-343F 制造商:cel 系列:- 包装:剪切带（CT） 零件状态:有效 晶体管类型:NPN 电压 - 集射极击穿（最大值）:3.3V 频率 - 跃迁:15GHz 噪声系数（dB，不同 f 时的典型值）:1.2dB @ 2GHz 增益:14dB 功率 - 最大值:190mW 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:50 @ 10mA，2V 电流 - 集电极（Ic）（最大值）:100mA 安装类型:表面贴装 封装/外壳:SOT-343F 供应商器件封装:SOT-343 标准包装:1 |
| 2SC5509-T2-A-FB | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC5517000LK | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC5521 | 制造商:JVC Worldwide 功能描述:TRANSISTOR |
| 2SC5536A-TL-H | 功能描述:两极晶体管 - BJT BIP NPN 50MA 12V FT=1.7G RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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