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参数资料
| 型号： | 2N7002ET3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 5/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 260MA SOT-23 |
| 产品变化通告： | Wire Change for SOT23 Pkg 26/May/2009 Product Obsolescence 21/Jan/2010 |
| 标准包装： | 10,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 260mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 2.5 欧姆 @ 240mA，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 0.81nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 26.7pF @ 25V |
| 功率 - 最大： | 300mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3（TO-236） |
| 包装： | 带卷 (TR) |
2N7002E
PACKAGE DIMENSIONS
SOT ? 23 (TO ? 236)
CASE 318 ? 08
ISSUE AP
3
D
SEE VIEW C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
E
A
A1
1
e
2
b
H E
L1
L
q
c
0.25
DIM MIN
A 0.89
A1 0.01
b 0.37
c 0.09
D 2.80
E 1.20
e 1.78
L 0.10
L1 0.35
H E 2.10
q 0 °
STYLE 21:
PIN 1. GATE
MILLIMETERS
NOM MAX
1.00 1.11
0.06 0.10
0.44 0.50
0.13 0.18
2.90 3.04
1.30 1.40
1.90 2.04
0.20 0.30
0.54 0.69
2.40 2.64
??? 10 °
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0 °
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
???
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10 °
VIEW C
SOLDERING FOOTPRINT
0.95
2. SOURCE
3. DRAIN
0.95
0.037
0.037
2.0
0.079
0.9
0.035
0.8
SCALE 10:1
mm
inches
0.031
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2N7002E/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N7002F | 制造商:NXP Semiconductors 功能描述:MOSFET N CH 60V 0.475A SOT23 制造商:NXP Semiconductors 功能描述:MOSFET, N CH, 60V, 0.475A, SOT23 制造商:NXP Semiconductors 功能描述:MOSFET, N CH, 60V, 0.475A, SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:475mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.78ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V ;RoHS Compliant: Yes |
| 2N7002F,215 | 功能描述:MOSFET N-CH TRNCH 60V .475A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2N7002F215 | 制造商:NXP Semiconductors 功能描述:MOSFET N CH 60V 475MA 3-SOT-23 |
| 2N7002FN3 | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:60V N-CHANNEL ENHANCEMENT MODE MOSFET |
| 2N7002FTR | 制造商:NXP Semiconductors 功能描述: |
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