参数资料
型号: 12217
厂商: NVE Corp/Sensor Products
文件页数: 82/145页
文件大小: 0K
描述: MAGNET 3.5MM DIA X 4MM THICK
标准包装: 10
系列: *
其它名称: Q7078272A
Application Notes
The end result in this case is that the mean free path length of the conduction electrons is fairly short,
resulting in a relatively high electrical resistance.
If an external magnetic field of sufficient magnitude is applied to this GMR material, it will overcome
the antiferromagnet coupling of the magnetizations between the two magnetic layers . At this point all
the electrons in both films will have the same spin . It will then become easier for the electrons two
move between the layers:
Spin States of the Magnetic Layers are the same;
Electrons Travel More Readily Through Entire Stack of GMR Material.
Average Mean Free Path of the Electrons is Long
External Magnetic Field Aligns
the Magnetization Directions of
Top and Bottom Films
Magnetization Direction of Top Film
Top Film
(Primarily Spin DOWN Electrons,
Due to Magnetization Direction)
Conductive Interlayer
Bottom Film
(Primarily Spin DOWN Electrons,
Due to Magnetization Direction)
Magnetization Direction of Bottom Film
Note that the mean free path length of the electrons has now increased . This results in an overall lower
electrical resistance for the GMR material . The change in resistivity of the material is shown on the
path length diagram below:
Resistivity Plot Showing Operate Points of GMR Material
With and Without an External Magnetic Field Applied;
Applying the External Field Results in Lower Device Resistance
Operate Point of Film,
Resistivity
No External Field Applied
Operate Point of Film
with External Field Applied
50
100
150
Mean Free Path Length of an Electron (Angstroms)
- 82 -
www.nve.com phone: 952-829-9217 fax: 952-829-9189
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